We present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg 0.15 Zn 0.85 Se, and ZnS/Mg 0.19 Zn 0.81 S quantum well structures and find a good agreement.