2013
DOI: 10.1002/pssb.201349262
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Polaronic phase transitions and complex permittivity of solid polar insulators with gigantic dielectric response

Abstract: Gigantic dielectric response (GDR) in polar insulators attracts significant scientific interest due its remarkable physics and the bright future of GDR materials in energy storage and memory devices. So far, the physical mechanism of extremely high complex dielectric permittivity (with the real part up to 106) is not established convincingly. Moreover, the application area of GDR materials is currently restricted due to unacceptable losses. In this paper, the polaronic approach for elucidation the GDR in solid… Show more

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Cited by 6 publications
(1 citation statement)
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“…GDC was suggested in polaronic conductors as a possible cause for high T c superconductivity, and it has also been reported for inorganic and hybrid metal oxide perovskites , and in molecular crystals . The origin of GDC in several classes of materials is a subject of debate, as it can be ascribed to different causes, namely, an intrinsically high polarizability due to either ionic displacements or to dipolar or hopping contributions of polarons, , or alternatively, morphology features as interfacial polarization at the insulating boundaries between semiconducting grain or polarization at the metal/dielectric interface. , In either case, in the previous literature reports the GDC is caused by inherent electronic carriers in the material, whereas a photoinduced effect has been only rarely observed . Below, we report the observation of GDC in MAPbX 3 perovskites that can be achieved by injection of carriers induced either by photogeneration or applied voltage, in a diode structure.…”
mentioning
confidence: 99%
“…GDC was suggested in polaronic conductors as a possible cause for high T c superconductivity, and it has also been reported for inorganic and hybrid metal oxide perovskites , and in molecular crystals . The origin of GDC in several classes of materials is a subject of debate, as it can be ascribed to different causes, namely, an intrinsically high polarizability due to either ionic displacements or to dipolar or hopping contributions of polarons, , or alternatively, morphology features as interfacial polarization at the insulating boundaries between semiconducting grain or polarization at the metal/dielectric interface. , In either case, in the previous literature reports the GDC is caused by inherent electronic carriers in the material, whereas a photoinduced effect has been only rarely observed . Below, we report the observation of GDC in MAPbX 3 perovskites that can be achieved by injection of carriers induced either by photogeneration or applied voltage, in a diode structure.…”
mentioning
confidence: 99%