Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Zhang, Lifei; Wang, Shuhui; Wang, Tongqing; Lu, Xinchun

doi:10.1007/s00170-023-12246-8

Cited by 3 publications

(1 citation statement)

References 38 publications

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“…This, in turn, affected the material removal rate and surface roughness of the wafers. It was demonstrated that these changes were linked to the adsorption of surfactant molecules on the surface of the abrasive grains [26]. The hydroxyl (-OH) structure in the molecule of polyoxyethylene nonionic surfactants could form Si•••O-H-type hydrogen bonds with colloidal SiO 2 , thus forming monolayer adsorption on the surface of SiO 2 particles.…”

Section: The Effect Of Surfactants With Different Functional Groups O...mentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

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The use of surfactants is crucial in the chemical–mechanical polishing fluid system for silicon wafers. This paper examines the impact of the functional group structure of polyoxyethylene-based nonionic surfactants and the variation in the polyoxyethylene (EO) addition number on the polishing performance of monocrystalline silicon wafers, to achieve the appropriate material removal rate and surface quality. The results demonstrated that the straight-chain structure of fatty alcohol polyoxyethylene ether (AEO-9) exhibited superior performance in wafer polishing compared to octylphenol polyoxyethylene ether (OP-9) and isoprenol polyoxyethylene ether (TPEG) and polyethylene glycol (PEG). By varying the number of EO additions of AEO-type surfactants, this study demonstrated that the polishing performance of monocrystalline silicon wafers was affected by the number of EO additions. The best polishing effect was achieved when the number of EO additions was nine. The mechanism of the role of polyoxyethylene-type nonionic surfactants in silicon wafer polishing was derived through polishing experiments, the contact angle, abrasive particle size analysis, zeta potential measurement, XPS, and other means of characterization.

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Section: The Effect Of Surfactants With Different Functional Groups O...mentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

View full text Add to dashboard Cite

show abstract

Experimental and theoretical computational study of corrosion inhibitors in the cobalt bulk chemical mechanical polishing (CMP) process

Miao,

Fan,

Zhang

et al. 2024

Journal of Molecular Liquids

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Regulating mechanisms of ultrasonic vibration on the bulge formation in laser polishing

Wang,

Zou,

et al. 2024

Surface and Coatings Technology

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Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Cited by 3 publications

References 38 publications

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Experimental and theoretical computational study of corrosion inhibitors in the cobalt bulk chemical mechanical polishing (CMP) process

Regulating mechanisms of ultrasonic vibration on the bulge formation in laser polishing

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