Poly[2,5-bis(3-tetradecylthiophen-2-yl) thieno [3,2-b] thiophene] Organic Polymer Based-Interdigitated Channel Enabled Thin Film Transistor for Detection of Selective Low ppm Ammonia Sensing at 25°C

Singh, Abhishek Kumar; Pandey, Amritanshu; Chakrabarti, P.

doi:10.1109/jsen.2019.2963269

Cited by 29 publications

(30 citation statements)

References 37 publications

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“…As a consequence, even devices with a high-quality semiconductor/dielectric interface suffer from bias stress (BS) effects [28]. That is the reason why, in the past five years, most OTFT-based sensors were built on Si substrate with evaporated source and drain electrodes through a shadow mask [3,[9][10][11][12][14][15][16][17][18][19].…”

Section: Bias Stress In Organic Thin-film Transistors Towardsmentioning

confidence: 99%

“…This is in agreement with the 20 % increase in ION/OFF for just a 0.7 % increase in μ. Take into account that slight variations of temperature or humidity could have also generated this minor drift in mobility [2,3,16,17,46,47]. The opposite happens at positive bias.…”

Section: B Current Versus Voltage Shifts Under Stressmentioning

confidence: 99%

“…Bottom source and drain contacts, on the other hand, make it possible to pattern the electrodes and, consequently, pack more transistors in less substrate area as in electronic noses (e-noses) [2,4]. Since the morphology of an organic semiconducting thin-film can be easily altered by organic solvents, patterning electrodes on top of such a film usually demands an orthogonal photoresist [5,6], microcontact printing [7] or, as done by most research groups in the past five years, metal evaporation through a shadow mask [3,[8][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

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Section: Bias Stress In Organic Thin-film Transistors Towardsmentioning

confidence: 99%

Section: B Current Versus Voltage Shifts Under Stressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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show abstract

“…In order to take this next step, the dielectric film must withstand semiconducting film deposition, as well as source and drain patterning. That is the reason why, even nowadays, the vast majority of FET-based sensors are built on oxidized Si wafers with source and drain electrodes evaporated through a shadow mask [12,14,17,[19][20][21][22][23][24]33]. Cross-linked polyvinyl phenol (PVP) on plastic substrates is a good candidate to replace brittle highly-doped Si [37].…”

Section: B Flexible Transistors Under Stressmentioning

confidence: 99%

“…It is worth noting that most recently developed polythiophene-based TFTs as gas sensors still use hard substrates (e.g. Si and glass) [11][12][13][14][15][16][17][18][19][20][21][22][23][24] and rarely study performance upon bending or stretching [25]. This research will be the basis for future studies on flexible polythiophene-based FETs as gas sensors.…”

Section: Introductionmentioning

confidence: 96%

Stability of Polythiophene-Based Transistors upon Bending for Gas Sensing Applications

Zanchin

Cavallari

Fonseca

2021

JICS

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It is presented herein a fabrication procedure for organic thin film transistors over flexible substrates, as well as an evaluation of the electrical performance upon bending stresses. Top gate/bottom contact flexible transistors of poly(3-hexylthiophene) (P3HT) were successfully fabricated, by carefully tuning organic films drying temperatures, photolithography solvents and the pattern of electrode pads. The transistors were processed over both rigid and flexible substrates for comparison purposes. A P3HT hole mobility approaching 0.01 cm2/Vs was observed for all devices and even on different substrates. In spite of a current modulation of ca. 10, P3HT over poly(ethylene terephthalate) (PET) featured transistor behavior upon bending down to a curvature radius of 8 mm. Bending direction, however, produced different effects on the transistor characteristics, especially on gold electrodes.

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Dielectric modulated organic thin film transistor trench biosensor for label‐free detection: Modeling and simulation analysis

Bhandari,

Dhamale,

Kawade

et al. 2023

Int J Numerical Modelling

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In the present paper, a biosensor is proposed with a split gate dielectric modulated bottom gate top contact organic thin‐film transistor. A cavity is marked below gate metal for enhancing sensitivity in biomedical applications. The organic thin‐film transistors‐based biosensors have shown applications over advanced biosensing platforms due to their intrinsic ability to transfer and amplify received biological signals into respective electrical signals. Immobilizing the biomolecules inside the cavity generates changes in surface potential. The analysis is carried out via different performance metrics that directly affect device electrical characteristics such as a change in spacer length applied voltages ( and ) as well as channel material. After modeling, the device output characteristics are compared corresponding to simulated outcomes that validated our results. The proposed model structure is categorized by dividing it into different sections. Each categorized section's surface potential is further evaluated via 1‐ and 2‐dimensional Poisson's equation. The simulations to recreate biomolecules in terms of dielectric constant and charge density are done in the Silvaco ATLAS tool. The maximum value of sensitivity of proposed biosensor is around 300 in the case of charged biomolecule detection.

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Poly[2,5-bis(3-tetradecylthiophen-2-yl) thieno [3,2-b] thiophene] Organic Polymer Based-Interdigitated Channel Enabled Thin Film Transistor for Detection of Selective Low ppm Ammonia Sensing at 25°C

Cited by 29 publications

References 37 publications

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Stability of Polythiophene-Based Transistors upon Bending for Gas Sensing Applications

Dielectric modulated organic thin film transistor trench biosensor for label‐free detection: Modeling and simulation analysis

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