Growth of InP self-assembled quantum dots on strained and strain-relaxed In x ( Al 0.6 Ga 0.4 ) 1 − x P matrices by metal-organic chemical vapor depositionThe role of arsine in the self-assembled growth of In As ∕ Ga As quantum dots by metal organic chemical vapor deposition Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with ͑100͒ and ͑111͒ orientations. The long-range order in pore distribution evidenced in ͑100͒InP samples proves to be favored by the so-called nucleation layer exhibiting branching pores oriented along ͗111͘ directions. The combination of long-range order with self-induced diameter oscillations is shown to be promising for nonlithographic growth of three-dimensional pore crystals.