Poly-SiGe films prepared by metal-induced growth using UHVCVD system

Abstract

Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.