Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

Abstract

For the CH3NH3PbI3-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivation method is developed to reduce GBs of the CH3NH3PbI3 film and improve the switching uniformity of the memristor. The crystal grain size of CH3NH3PbI3 increases with the addition of PAN, and the corresponding number of GBs is consequently reduced. The fluctuations of the RS parameters of the memristor device are significantly reduced. With the memristor, nonvolatile image sensing, image memory, and image Boolean operations are demonstrated. This work proposes a strategy for developing high-performance CH3NH3PbI3 optoelectronic memristors.

Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact

“…The abrupt transition from LRS to HRS is an indication of the formation of metallic filaments. In addition, we have identified in our previous reports a light-induced ion-vacancy recombination effect which increases the LRS, thus confirming the presence of filaments induced by ion vacancies. − A simplified illustration of the conduction mechanism of our MHP device is illustrated in Figure a for the ON state and in Figure d for the OFF state. Initially, the halide ions are randomly distributed through the perovskite layer.…”

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

“…82–84 Upon illumination, a decrease in the LRS current due to V I / V I X recombination process results in conductive filament annihilation. 85–90 Such abrupt switching can also be the result of conductive bridges between the electrodes through either halide (either I or Br) vacancies or metal cations upon electrochemical metallisation. For halide perovskite resistive switches in the initial state, halide vacancies are randomly distributed in the perovskite layer without preferential orientation.…”