Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

Matsuda, Yoshinobu; Funato, Mitsuru; Kawakami, Yoichi

doi:10.7567/apex.10.071003

Cited by 16 publications

(20 citation statements)

References 32 publications

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“…2(d)] disappears where the surface is disturbed. The arms of the chevron appear to have a different semi-polar orientation, and therefore are expected to have a different rate of InN incorporation, [29][30][31] than the majority of the sample, which could account for this considerable redshift. A similar shift has been seen in chevrons for samples with comparable emission energy in Ref.…”

Section: Resultsmentioning

confidence: 99%

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Brasser

Bruckbauer

Gong

et al. 2018

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/63662/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blueemitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices.

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Section: Resultsmentioning

confidence: 99%

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Brasser

Bruckbauer

Gong

et al. 2018

Journal of Applied Physics

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“…The corresponding details of the growth conditions were described in Refs. [2] and [9]. The QW local structural properties were assessed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS).…”

Section: Methodsmentioning

confidence: 99%

“…In composition) has been attributed to active In adatom migration from the inclined {1122} to top (0001) facets [10]. In contrast, the emission wavelengths from the 3D QWs on (1122) are in the order of inclined {1101} > top (1122) > side {1100} [9]. Because both 3D QWs have similar trapezoidal cross sections, the observed difference indicates the presence of an unknown factor in addition to adatom migration.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

Matsuda

Funato

Kawakami

2018

IEICE Trans. Electron.

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The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (1122) GaN substrates are discussed. The structure is composed of (1122), {1101}, and {1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (1122) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.

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“…In general, it has been reported that the indium incorporation rate at the front edge (20-21) of the arrowhead-like structure is higher than the sidewall edge (10)(11) and upper plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) regions. [24][25][26] As the HP-ELO GaN template with a width of 9.0 μm has the maximum area of a large and small arrowhead-like buddle structures, the density of front edge, which can have a high indium composition region, is maximized at the 9.0 μm-width hexagonal pattern shown in Figure 2d. Therefore, we believe that the highest indium localization and longest emission wavelength were obtained by the HP-ELO GaN-based LED with a width of 9.0 μm.…”

Section: Spectral Behaviors Of Hp-elo Gan-based Leds With Different Hmentioning

confidence: 99%

“…Based on these results, we believe that the indium incorporation rate decreases in the order of the front edge (20)(21), side edge (10)(11), and top plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) of the arrowhead-like surface structure. [24][25][26] 3.4. Injection Current Controlled Red, Green and Blue Emissions of Semipolar HP-ELO GaN-Based LEDs Figure 6 shows the EL spectra of a semipolar (11-22) HP-ELO GaN-based LEDs with a 9.0 μm-width hexagonal pattern as the injection current is increased from 0.01 to 5.0 mA.…”

Section: Strong Blueshifts Of Hp-elo Gan-based Leds Withmentioning

confidence: 99%

Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

Choi

Baek

Kim

et al. 2020

Physica Status Solidi (a)

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Red, green, and blue electroluminescence (EL) in semipolar (11-22) GaN-based light-emitting diodes (LEDs) is achieved using SiO 2 hexagonal patterns epitaxial lateral overgrowth (HP-ELO). The size, density, and area of arrowhead-like surface structure of the semipolar (11-22) HP-ELO GaN are significantly affected by increasing the SiO 2 hexagonal patterns from 6.0 to 15.0 μm. The full width at half maximum and the blueshift wavelength of EL spectra increases with increasing from 6.0 to 9.0 μm, and then decreases with increasing the hexagonal pattern width to 15.0 μm. These results show a similar tendency to the surface area of arrowhead-like structure. In addition, micro-EL images show that indium localization-induced low energy emission initiates at the front end of arrowheadlike pattern, and then blueshifted emissions propagate to the side edges as the injection current increases. Therefore, it suggests that HP-ELO can control the arrowhead-like surface structure composed of different indium compositions, which can achieve red, green, and blue emissions of a semipolar (11-22) HP-ELO GaN-based LED.

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Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

Cited by 16 publications

References 32 publications

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

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