1989
DOI: 10.1116/1.584783
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Polycide reactive ion etch: Enhanced circuit performance through profile modification

Abstract: Articles you may be interested inDeep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation Ion beam enhanced magnetron reactive ion etching Appl. Phys. Lett. 51, 2007Lett. 51, (1987; 10.1063/1.98275 Reactive ion etching for submicron structures of refractory metal silicides and polycidesA three step, "profile flexi.ble" polycide etch was developed which allowed polycide profiles ranging from vertical to controlled undercut. A pressure controned … Show more

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“…As the deposition rate increases, more Ag is evaporating into the chamber and therefore, the chamber pressure increases. As the chamber pressure increases, the deposition rate of the Ag also increases [173,174].…”
Section: Evaporationmentioning
confidence: 99%
“…As the deposition rate increases, more Ag is evaporating into the chamber and therefore, the chamber pressure increases. As the chamber pressure increases, the deposition rate of the Ag also increases [173,174].…”
Section: Evaporationmentioning
confidence: 99%