“…After Bergveld [ 1 ] first presented an ion-sensitive field-effect transistor (ISFET), various types of ISFET have been presented, i.e., silicon-based ISFETs (Si-ISFETs) with an insulator of tantalum pentaoxide (Ta 2 O 5 ), with silicon nitride (Si 3 N 4 ), with aluminum oxide (Al 2 O 3 ) [ 2 ], and with a diamond-like carbon insulator [ 3 ]. We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [ 4 , 5 , 6 , 7 ], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [ 8 , 9 , 10 , 11 ]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”