Polycrystalline diamond growth on β-Ga<sub>2</sub>O<sub>3</sub> for thermal management

Malakoutian, Mohamadali; Song, Yiwen; Yuan, Chao; Ren, Chenhao; Lundh, James Spencer; Lavelle, Robert M.; Brown, John E.; Snyder, David W.; Graham, Samuel; Choi, Sukwon; Chowdhury, Srabanti

doi:10.35848/1882-0786/abf4f1

Cited by 35 publications

(23 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Resultsmentioning

confidence: 99%

“…In other words, the current design only offers its full cooling performance for switching frequencies less than ∼3 kHz, while the ideal case is effective for frequencies up to ∼250 kHz. This switching frequency limit can be further increased by the implementation of top-side cooling solutions such as a diamond passivation overlayer 61 and flip-chipping. 62 A recent computational study 15 has predicted that practical multi-finger devices would experience significantly aggravated self-heating (a 4× higher channel temperature than singlefinger Ga 2 O 3 devices under identical power density conditions) due to the thermal cross-talk 16 among adjacent current channels.…”

Section: Modeling and Design Optimizationmentioning

confidence: 99%

See 1 more Smart Citation

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Song

Bhattacharyya

Karim

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga2O3/4H–SiC composite wafer using a fusion-bonding method. A low-temperature (≤600 °C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga2O3 devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (∼300 MW/cm2), which is the highest among heterogeneously integrated Ga2O3 devices reported to date. Simulations calibrated based on thermal characterization results of the Ga2O3-on-SiC MOSFET reveal that a Ga2O3/diamond composite wafer with a reduced Ga2O3 thickness (∼1 μm) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of today’s GaN-on-SiC power switches.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Modeling and Design Optimizationmentioning

confidence: 99%

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Song

Bhattacharyya

Karim

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

show abstract

“…Furthermore, controlling near-surface ion damage during sputtering deposition of a barrier layer/insulating dielectric , is required. In this case, the CVD-synthesized chemically inert insulating hBN layer will be significant with much higher in-plane thermal conductivity for use in Ga 2 O 3 -based Schottky junctions. , …”

Section: Introductionmentioning

confidence: 99%

“…In this case, the CVDsynthesized chemically inert insulating hBN layer will be significant with much higher in-plane thermal conductivity for use in Ga 2 O 3 -based Schottky junctions. 38,39 Previously, we have demonstrated the integration of highly conducting graphene and copper iodide (γ-CuI) films with the β-Ga 2 O 3 substrate for the fabrication of deep-UV photoresponsive devices. 41,42 The fabrication of quasi-two-dimensional metal−insulator−semiconductor field-effect transistors was demonstrated by the mechanical transfer process of hBN and nanothin flakes of β-Ga 2 O 3 .…”

Section: ■ Introductionmentioning

confidence: 99%

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

et al. 2022

View full text Add to dashboard Cite

We present the device properties of a nickel (Ni)–gallium oxide (Ga 2 O 3 ) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga 2 O 3 /In was created using a chemical vapor-deposited hBN film on a Ga 2 O 3 substrate. The current–voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (−7.2 V). The hBN interfacial layer for the Ga 2 O 3 -based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga 2 O 3 -based Schottky junction devices.

show abstract

“…[5,6] Diamond is an excellent material to aid in extracting heat from these devices to reduce channel temperature. [7,8] Our prior work has demonstrated polycrystalline (PC) diamond on GaN with grains larger than 2 µm offering a thermal conductivity (TC) > 650 W m −1 K −1 , which is larger than that of Si, SiC, GaN, and any dielectric material's TC. Such high-quality diamond grains can be used as a heatspreading layer if it is integrated close to the hot spot.…”

mentioning

confidence: 99%

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Malakoutian

Zheng

Woo

et al. 2022

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

The ever-increasing power density is a major trend for electronics applications from dense computing to 5G/6G networks. Joule heating and resulting high temperature in the device channel due to the increased power density results in performance degradation and premature failure. Diamond integration near the hot spot can spread the heat by increasing the heat transfer coefficient. Diamond is mostly grown at high temperatures (700-1000 °C), which limits its integration with many semiconductor technologies. Here, a high-quality 400 °C-diamond by modifying the gas chemistry at different nucleation stages, with a sharp sp 3 Raman peak (FWHM≈6.5 cm −1 ) and high phase purity (97.1%), similar to 700 °C-diamond (>98%) is demonstrated. An average grain size of 650 nm with a thickness of 790 nm corresponding to an anisotropy ratio of 1.21 at 400 °C close to the best-reported of 1.12 at 700 °C is achieved. This near-isotropic diamond exhibits a relatively high thermal conductivity of ≈300 W m −1 K −1 and a thermal boundary resistance as small as only 5 m 2 K G −1 W −1 (on SiO 2 and Si 3 N 4 ). Achieving such a high-quality diamond at 400 °C demonstrates the possibility to grow the diamond on a wide range of semiconductors including Si, InP, Ga 2 O 3 , SiC, and GaN where SiO 2 or its variations, and Si 3 N 4 are commonly used dielectrics.

show abstract

Polycrystalline diamond growth on β-Ga₂O₃ for thermal management

Cited by 35 publications

References 26 publications

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Contact Info

Product

Resources

About

Polycrystalline diamond growth on β-Ga2O3 for thermal management

Cited by 35 publications

References 26 publications

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Contact Info

Product

Resources

About

Polycrystalline diamond growth on β-Ga₂O₃ for thermal management

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film