Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

Mebarki, Bencherki; Sumiya, Shigeaki; Yoshida, Ryohei; Ito, Masatoshi; Hori, Masaru; Goto, Toshio; Samukawa, Seiji; Tsukada, Tsutomu

doi:10.1016/s0167-577x(99)00097-x

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…In general, high temperature or complex laser annealing of amorphous silicon is necessary to fabricate poly-Si films. 1) From the viewpoint of reducing the manufacturing costs and energy consumption, however, the most important issue in recent years has been to deposit device-quality poly-Si films at high rates on low-cost substrates such as glass and metal sheet at substrate temperatures less than 600 C. Although there are many deposition methods for the fabrication of poly-Si films at low temperatures, it is recognized that plasma-enhanced chemical vapor deposition (PECVD) [2][3][4][5] and hot-wire CVD 6) are the most applicable techniques to realize the low temperature growth of poly-Si films. However, increasing the deposition rate is still necessary even in those techniques.…”

Section: Introductionmentioning

confidence: 99%

Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Ohmi

Kakiuchi

Yasutake

et al. 2006

jjap

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Using the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique, polycrystalline silicon (poly-Si) films were deposited at high rates. The plasma was generated by 150 MHz very high frequency (VHF) power. Deposition rate, morphology, and structure of the poly-Si films were studied as a function of the H 2 /SiH 4 ratio, using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Plasma length and optical emission were also investigated to examine the reaction process in the plasma. The maximum value of deposition rate was 7.4 nm/s at an SiH 4 concentration of 0.1% (H 2 /SiH 4 ¼ 100). SEM and TEM observations revealed that the poly-Si films had a columnar structure, and that the crystallites in the films deposited at high H 2 /SiH 4 ratios contained no visible defects except at the grain boundaries. It was also shown that the Si film prepared has a preferential orientation of (220) by XRD. In addition, it was found that the plasma length was sensitive to the H 2 concentration, while it was not affected by the SiH 4 concentration within the deposition conditions used. This fact suggested that almost all the VHF power was consumed in the decomposition of H 2 molecules.

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Section: Introductionmentioning

confidence: 99%

Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Ohmi

Kakiuchi

Yasutake

et al. 2006

jjap

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“…In our previous studies, we formed µc-Si:H films of high crystalline fraction with an ultrathin intermediate amorphous layer at a substrate temperature of 300 • C, using continuous wave (cw) ultrahighfrequency (UHF) plasma with varying parameters (e.g., UHF power, the dilution gas ratio of silane gas to hydrogen gas, and pressure). 7,8) However, the crystalline orientation of the resulting films was random. In this study, we investigated the synthesis of µc-Si:H thin films by using a pulse-modulated UHF PECVD system employing a mixture of silane and hydrogen gases.…”

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confidence: 99%

Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma

Murata¹,

Mizutani²,

Iwasaka³

et al. 2001

Jpn. J. Appl. Phys.

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Microcrystalline silicon films were formed on glass substrate at 300 • C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.

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Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma

Sumiya

Mizutani

Yoshida

et al. 2000

Journal of Applied Physics

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Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency ͑UHF͒ plasma enhanced chemical vapor deposition from a mixture of silane (SiH 4) and hydrogen (H 2) gases at low substrate temperatures (T s). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H 2 dilution, total pressure, mixture ratio of SiH 4 to H 2 and T s. A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a T s of 100°C. At a temperature of 300°C, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaining a high density of hydrogen atoms, and which improved the crystallinity at low T s .

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Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

Cited by 5 publications

References 11 publications

Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma

Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma

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Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

Cited by 5 publications

References 11 publications

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma

Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma

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Product

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Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Influence of H₂/SiH₄ Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition