Polycrystalline silicon-germanium films for integrated microsystems

Franke, Alexander; Heck, John; King, Tsu‐Jae; Howe, Roger T.

doi:10.1109/jmems.2002.805051

Cited by 137 publications

(74 citation statements)

References 34 publications

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“…62 This explains the difference in the Q-factor for poly Ge MEMS devices given above. 61 Although large Q factors are required for resonators, for a stable platform, a low Q-factor is required. A low Q-factor will help isolate the devices placed on the platform from external noise and vibrations, so that their electrical/optical/mechanical properties remain stable.…”

Section: Membrane Vibrational Propertiesmentioning

confidence: 99%

“…The measured Q-factors are lower than the reported membrane behavior for poly Ge and Si in vacuum, but have similar Q values at atmospheric pressure. 61,64 This is because at atmospheric pressure, the limit on Q factor values is determined by damping due to the air, while in vacuum damping is governed by different mechanisms such as clamping losses, thermoelastic and phonon-phonon interactions, as well as losses at the internal defects in the films. In the case of the studied membrane which has relatively low Q factors, high crystalline quality, and low tensile stress (good matching between the FIG.…”

Section: Fig 8 Experimental Arrangementmentioning

confidence: 99%

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High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah

Rhead

Halpin

et al. 2014

Journal of Applied Physics

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-forprofit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:Copyright ( A note on versions:The version presented in WRAP is the published version or, version of record, and may be cited as it appears here.For more information, please contact the WRAP A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Perot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials. V C 2014 AIP Publishing LLC. [http://dx

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Section: Membrane Vibrational Propertiesmentioning

confidence: 99%

Section: Fig 8 Experimental Arrangementmentioning

confidence: 99%

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah

Rhead

Halpin

et al. 2014

Journal of Applied Physics

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“…T.-C. Nguyen, "Integrated micromechanical circuits for RF front ends," Proceedings of the 36 th European Solid-State Device Research Conference, Montreux, Switzerland, Sept. 19-21, 2006, pp. 7-16. Although the use of tungsten instead of the more conventional copper and aluminum prevents the process of [15] from widespread use, other variants of this modular process have now been demonstrated that allow more conventional CMOS metals [16]. In addition, other non-modular merging processes [17] have already been used in integrated MEMS products for many years now.…”

Section: Mems Technologymentioning

confidence: 99%

Integrated Micromechanical Circuits for RF Front Ends

Nguyen¹

2006

2006 Proceedings of the 32nd European Solid-State Circuits Conference

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Abstract-Having now produced devices with sufficient Q, thermal stability, aging stability, and manufacturability, vibrating RF MEMS technology is already finding its way into next generation timing and wireless applications. At this juncture, the technology is now poised to take its next logical steps: higher levels of circuit complexity and integration. In particular, as vibrating RF MEMS devices are perceived more as circuit building blocks than as stand-alone devices, and as the frequency processing circuits they enable become larger and more complex, the makings of an integrated micromechanical circuit technology begin to take shape, perhaps with a functional breadth to rival that of integrated transistor circuits. After briefly reviewing the present state of vibrating RF MEMS device technology, this paper suggests the mechanical circuit element attributes most likely to insure a broad functional range for future integrated micromechanical circuits.

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“…Recently, however, on-chip vibrating micromechanical resonators based on MEMS technology have become increasingly attractive as onchip frequency selective elements for communication-grade oscillators and filters, spurred by demonstrations of Q's > 145,780 at 60 MHz [1], frequency temperature dependencies of only 18 ppm over 25-105°C at 10 MHz [2], and by a potential for single-chip integration with transistors [3]. A recent reference oscillator using an SOI-based vibrating micromechanical resonator [4] has, in fact, already satisfied the GSM specification (-130 dBc/Hz and -150 dBc/Hz at 1 kHz and farfrom-carrier offsets, respectively, from a 13 MHz carrier).…”

Section: Introductionmentioning

confidence: 99%

“…Oscillators employing surface-micromachined resonator tanks, however, encumbered by a smaller power handling ability, do not quite yet satisfy GSM specs [1] over all carrier offsets. Between SOI-and surface-micromachining, the latter is perhaps more attractive, since it avoids high-aspect ratios and has a more successful planar integration history [3] [5].…”

Section: Introductionmentioning

confidence: 99%

Low phase noise array-composite micromechanical wine-glass disk oscillator

Lin

Ren

et al.

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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A reduction in phase noise by 13 dB has been obtained over a previous 60-MHz surface-micromachined micromechanical resonator oscillator by replacing the single resonator normally used in such oscillators with a mechanically-coupled array of them to effectively raise the power handling ability of the frequency selective tank. Specifically, a mechanicallycoupled array of nine 60-MHz wine-glass disk resonators embedded in a positive feedback loop with a custom-designed, single-stage, zero-phase-shift sustaining amplifier achieves a phase noise of -123 dBc/Hz at 1 kHz offset and -136 dBc/Hz at far-from-carrier offsets. When divided down to 10 MHz, this effectively corresponds to -138 dBc/Hz at 1 kHz offset and -151 dBc/Hz at far from carrier offset, which represent 13 dB and 4 dB improvements over recently published work on surface-micromachined resonator oscillators, and also now beat stringent GSM phase noise requirements by 8 dB and 1 dB, respectively.

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Polycrystalline silicon-germanium films for integrated microsystems

Cited by 137 publications

References 34 publications

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Integrated Micromechanical Circuits for RF Front Ends

Low phase noise array-composite micromechanical wine-glass disk oscillator

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