Polycrystalline SnO2 thin films grown at different substrate temperature by pneumatic spray

Allag, A.; Rahmane, Saâd; Kouidri, Nabila; Hafida, Attouche; Ouahab, Abdelouahab

doi:10.1007/s10854-016-6122-9

Cited by 12 publications

(7 citation statements)

References 33 publications

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“…Therefore, as shown in the inset of Figure , the optical band gaps for the SnO 2 films prepared at 540, 580, 620, and 660 °C are estimated to be 4.05, 3.97, 3.93, and 3.96 eV, respectively, which are in close proximity to the values reported in previous r‐SnO 2 film studies . SnO 2 has a direct band gap of 3.62 eV in theoretical calculation, but due to its complicated electronic structure, rutile SnO 2 films exhibited a slightly higher optical band gap as reported by some scholars …”

Section: Resultssupporting

confidence: 85%

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Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Luan

Cao

et al. 2018

Crystal Research and Technology

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Rutile SnO2 epitaxial films are deposited on MgF2 (001) substrates at different substrate temperatures (540–660 °C) by metal organic chemical vapor deposition. Structural, optical, and electrical properties of the films as well as the epitaxial mechanism are investigated in detail. The structure analyses manifest that the film deposited at 620 °C is rutile phase SnO2 and exhibits the best crystallinity. The epitaxial relationships are determined as SnO2 (110) || MgF2 (001) with SnO2 [001] || MgF2 [110] and [true1¯10]. The Hall mobility, resistivity, and carrier concentration of the 620 °C‐deposited film are 10.4 cm2 · V−1 · s−1, 0.75 Ω · cm, and 8.1 × 1017 cm−3 respectively. The average transmittance in the visible range of the SnO2 film deposited at 620 °C exceeds 88% and the optical band gap is about 3.93 eV.

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Section: Resultssupporting

confidence: 85%

“…[24,25] SnO 2 has a direct band gap of 3.62 eV in theoretical calculation, but due to its complicated electronic structure, rutile SnO 2 films exhibited a slightly higher optical band gap as reported by some scholars. [26][27][28]…”

Section: Resultsmentioning

confidence: 99%

Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Luan

Cao

et al. 2018

Crystal Research and Technology

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“…As evidenced by prior studies, it has been established that the predominant growth of the (211) plane in SnO 2 occurs during thermal processing at temperatures surpassing 500 °C. The expression [58][59][60] is currently undergoing evaluation. Therefore, the experimental results provide confirmation that the heat treatment process took place through the preferential growth of the (211) plane of SnO 2 .…”

Section: Resultsmentioning

confidence: 99%

Enhanced Durability and Catalytic Performance of Pt–SnO₂/Multi‐Walled Carbon Nanotube with Shifted d‐Band Center for Proton‐Exchange Membrane Fuel Cells

Min,

Choi,

Kang

et al. 2023

Small Structures

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Worldwide, significant efforts are made to identify energy sources that can help achieve carbon neutrality and promote sustainable development. The development of a catalyst that combines durability and high performance is essential for the commercialization of proton‐exchange membrane fuel cells (PEMFCs). In a fuel cell, carbon corrosion occurs during startup and shutdown due to improper local flooding caused by inadequate water management. In this study, a Pt‐based catalyst is designed with excellent durability and high activity. Introducing a metal oxide layer modified with Pt/multi‐walled carbon nanotubes reduces the direct contact between carbon and the fuel cell environment. This helps prevent carbon corrosion and inhibits the separation, aggregation, and growth of Pt nanoparticles. Moreover, the catalyst exhibits enhanced oxygen reduction activity due to the electronic effect of the metal oxide layer that is coated on it. In this study, by implementing a carbon erosion acceleration protocol, excellent catalytic properties during a load‐cycling experiment consisting of 5,000 cycles are reported. The practical application of the developed catalyst in PEMFCs offers an effective approach to developing Pt‐group metal catalysts with exceptional activity.

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“…The figure of merit is often used as a performance indicator for conducting films. Two critical metrics used to assess the quality of transparent conducting oxides are optical transmittance and electrical conductivity [31]. The figure of merit (F) correlate these two parameters by the following formula [32]:…”

Section: Electrical Properties and Figure Of Meritmentioning

confidence: 99%

Experimental and numerical simulation studies of CuO thin films based solar cells

Benaissa,

Garmim,

El Boughdadi

et al. 2023

Eng. Res. Express

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In this work, CuO thin films that were elaborated via spray pyrolysis have been examined in terms of how the film thickness affects the structural, optical, and electrical aspects of the films. The CuO films are polycrystalline with a monoclinic structure according to X-ray diffraction. Moreover, the band gap energy was discovered to be between 1.14eV, 1.53 eV and 1.61. Using the four-point probe, the electrical resistivity was computed and the high conductivity found corresponds to the sample generated with a film thickness of t=292 nm, is 7.52 (×10-3 Ω.cm)-1. Besides that, using SCAPS-1D software, a numerical calculation of the performance of the CuO-based solar cells was made Based on the experimental finding. So when absorber layer thickness is 292 nm, and the band gap value is 1.53 eV, the optimized CuO/TiO2/FTO solar cell structure demonstrated a potential efficiency of 13,38%. The impact of the absorber layer thickness and temperature on solar cell performance have been thoroughly explored. Moreover, the CuO/TiO2/FTO solar cells curves of external quantum efficiency (EQE) for various CuO layer thicknesses were determined. 

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Polycrystalline SnO2 thin films grown at different substrate temperature by pneumatic spray

Cited by 12 publications

References 33 publications

Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Enhanced Durability and Catalytic Performance of Pt–SnO₂/Multi‐Walled Carbon Nanotube with Shifted d‐Band Center for Proton‐Exchange Membrane Fuel Cells

Experimental and numerical simulation studies of CuO thin films based solar cells

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Polycrystalline SnO2 thin films grown at different substrate temperature by pneumatic spray

Cited by 12 publications

References 33 publications

Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD

Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD

Enhanced Durability and Catalytic Performance of Pt–SnO2/Multi‐Walled Carbon Nanotube with Shifted d‐Band Center for Proton‐Exchange Membrane Fuel Cells

Experimental and numerical simulation studies of CuO thin films based solar cells

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Resources

About

Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Characterization of Rutile SnO₂ Epitaxial Films Grown on MgF₂ (001) Substrates by MOCVD

Enhanced Durability and Catalytic Performance of Pt–SnO₂/Multi‐Walled Carbon Nanotube with Shifted d‐Band Center for Proton‐Exchange Membrane Fuel Cells