ance, and reliable retention. [1-5] Typically, memristive devices are constructed with a relatively simple structure of metal/ insulator/metal configuration, which can work under two main mechanisms. For example, the formation and dissolution of metallic filaments (e.g., Cu or Ag) are responsible for the low and high resistance states in the electrochemical metallization memory systems. Meanwhile, in the valence change memory devices, the motion of oxygen anions or the migration of cations leads to the resistance change of the metal oxide materials, thus contributing to resistive switching behavior of these devices. To date, a wide variety of organic (e.g., Ru-complex with azo-aromatic ligands, [6] pyrene-affixed triazoles, [7] two-dimensional imine polymer, [8] etc.) and inorganic (e.g., TaO x , TiO x , and HfO x , etc.) [9-12] materials have been developed for the construction of memristive devices. Despite the considerable advances in this field, the exploration of nanomaterials with tunable composition, thickness, dimension, and conductivity is still of great importance.