2005
DOI: 10.1016/j.polymer.2004.10.003
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Polyimide and polyhedral oligomeric silsesquioxane nanocomposites for low-dielectric applications

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Cited by 186 publications
(125 citation statements)
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“…[42] Many dielectric polyimides have been created, and the original motivation for the development of polyimide dielectrics was as a lowcost alternative to on-chip silicon dioxide with high T g , high modulus, and low dielectric constant as compared with silicon dioxide. [43] The dielectric constants (ɛ r ) of the prepared fluorinated polyimides were determined in the range of 2.60-2.76, as shown in Table 4, which are lower than the non-fluorinated polyimides such as PMDA-ODA (3.16), [44] PI-POSS (2.65-3.22) [45], and PI/PSSQ (2.79-3.61) [46] nanocomposites, but comparable with other fluorinated polyimides. [18,19,23] The high electrical insulating and low dielectric constants of the fluorinated polyimides are mainly attributed to the high fluorine loadings in the polyimide backbones.…”
Section: Dielectric Properties and Water Absorption Of Pieismentioning
confidence: 99%
“…[42] Many dielectric polyimides have been created, and the original motivation for the development of polyimide dielectrics was as a lowcost alternative to on-chip silicon dioxide with high T g , high modulus, and low dielectric constant as compared with silicon dioxide. [43] The dielectric constants (ɛ r ) of the prepared fluorinated polyimides were determined in the range of 2.60-2.76, as shown in Table 4, which are lower than the non-fluorinated polyimides such as PMDA-ODA (3.16), [44] PI-POSS (2.65-3.22) [45], and PI/PSSQ (2.79-3.61) [46] nanocomposites, but comparable with other fluorinated polyimides. [18,19,23] The high electrical insulating and low dielectric constants of the fluorinated polyimides are mainly attributed to the high fluorine loadings in the polyimide backbones.…”
Section: Dielectric Properties and Water Absorption Of Pieismentioning
confidence: 99%
“…As an alternative, waterborne porous PI has been prepared via condensation of water vapor onto a PI solution spun on a substrate [2], with micron-sized condensed water droplets acting as a porogen. This method allows the dielectric constant of porous films to be further reduced to 1.7, although a 48-h time period was required for water droplets to form in these porous films, with other porogens also extensively studied [12][13][14][15][16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, incorporation of POSS unit in backbone of the linear step-condensed polymer in definite structure was quite difficult as the polycondensation of POSS having multiple reactive sites of equivalent reactivity with di-functional monomers typically generates insoluble cross-linked products [15][16][17][18]. The problems caused by the multi-functionality of POSS could be readily eradicated by replacing POSS with double-decker silsesquioxane (DDSQ) having two definite polymerizable functional groups.…”
Section: Introductionmentioning
confidence: 99%