Polymer-Compatible Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Graphene on Electroplated Cu for Flexible Hybrid Electronics

Abstract

Flexible hybrid electronics and fan-out redistribution layers rely on electroplating Cu on polymers. In this work, direct low-temperature plasma-enhanced chemical vapor deposition (PECVD) of graphene on electroplated Cu over polyimide substrates is demonstrated, and the deposition of graphene is found to passivate and strengthen the electroplated Cu circuit. The effect of the H 2 /CH 4 ratio on the PECVD graphene growth is also investigated, which is shown to affect not only the quality of graphene but also the durability of Cu. 100,000 cycles of folding with a bending radius of 2.5 mm and the corresponding resistance tests are carried out, revealing that Cu circuits covered by graphene grown with a higher H 2 /CH 4 ratio can sustain many more bending cycles. Additionally, graphene coverage is shown to suppress the formation of copper oxides in ambient environment for at least 8 weeks after the PECVD process.

Graphene on Nanoscale-Thick Au Films: Implications for Anticorrosion in Smart Wearable Electronics

“…However, layers beyond bilayer graphene could not be developed due to limited carbon solubility in Au and the hindrance of carbon species to penetrate graphene layers to form the third layer or more. 38 Although plasma significantly reduced the required growth temperature compared to thermal CVD, we note that no graphene growth on Au could take place when the plasma power was lowered from 10 to 8 W, while graphene could still grow on Cu at 8 W. 35 This finding may be attributed to the lower catalytic activity of Au than that of Cu so that a higher substrate temperature or plasma power is required for graphene formation. On the other hand, we note that a high plasma power does not necessarily guarantee successful graphene growth because energetic ion bombardment dominates under a high plasma power, which could lead to significant sample surface damages and removal of adsorbed hydrocarbon species, thus preventing graphene formation.…”

A brief review of low-temperature graphene growth via chemical vapor deposition

“…h). [46] 유연한 기판인 폴리이미드에서 그 래핀의 직접적인 성장은 유연한 전자 장치 분야에 응용 활성 가스 전구체를 이용한 저온 CVD-그래핀의 합성 은 주로 사용되는 구리 기판 이외에도 Si/Al [44] , V 2 O 3 [43] ,…”

“…Au [42] , 탄소 섬유 [47] , 니켈 [48] , SiO 2 /Si [49] 핀을 합성하였다. [45,46] 3.2 고체 전구체를 활용한 CVD-그래핀 성장 래핀을 합성한 CVD의 개략도가 제시되어 있다. [50] 그림 에서 볼 수 있는 것과 같이 가스 주입구 쪽에 고체 전구 것이다.…”

“…[59] 피리딘을 이용한 저온 합성 에 대한 연구는 계속 진행되어 왔지만 [60,61] 기 전도를 유지하였다. [46] 저온 CVD 그래핀은 투명한 기 판에서도 합성이 가능하다(Fig. ).…”

Low-Temperature Direct Growth of Nanocrystalline Multilayer Graphene on Silver with Long-Term Surface Passivation

“…Recently, Kim et al have further lowered the required temperatures for PECVD growth of graphene by forced convection to increase the reaction probability of excited species or radicals on the substrate surface before their recombination. To date, the reported growth temperatures for various PECVD graphene synthesis methods are found to range from 160 to 700 °C on various substrates. ,− …”