2003
DOI: 10.1021/la034138h
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Polymer Surface Modification Using Microwave-Oven-Generated Plasma

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Cited by 121 publications
(100 citation statements)
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“…In brief, the claims are as follows: (1) positioning a vacuum chamber within the MRC with embodiments for admitting gas into the vacuum chamber and through the cavity and for extracting gas by-products from the vacuum chamber; (2) relating to claim 1, where a means of regulating the gas to generate uniform plasma in the vacuum chamber; (3) a moving antenna for a means of generating a time average of uniform plasma; (4) a rotating antenna for a means of generating a time average of uniform plasma; (5) a means of reducing microwave leakage around each feedthrough; (6) a means of water cooling substrates within the vacuum chamber during plasma etching without thermal damage to the substrate during the plasma etch process; (7) relating to claim 6, where the water tubes have a heat transfer relationship with the vacuum chamber with a means of microwave leakage prevention; (8) a means of controlling microwave power; (9) relating to claim 8, a potentiometer in series with the primary transfer side of the magnetron transformer for controlling the maximum power in the oven; (10) relating to claim 9, when plasma etching of organics from substrate; and finally, (11) relating to claim 10, the use of water cooling of the substrate. Beyond Ribner's patent, some studies [11][12][13][14][15][16][17][18][19][20][21][22] show that the microwave oven plasma reactor can be used for a multitude of processes and in many levels of oven reconstruction. e following sections describe the changes required to conventional domestic microwave ovens that range from minimal to major.…”
Section: Converted Microwave Oven Plasmamentioning
confidence: 99%
See 1 more Smart Citation
“…In brief, the claims are as follows: (1) positioning a vacuum chamber within the MRC with embodiments for admitting gas into the vacuum chamber and through the cavity and for extracting gas by-products from the vacuum chamber; (2) relating to claim 1, where a means of regulating the gas to generate uniform plasma in the vacuum chamber; (3) a moving antenna for a means of generating a time average of uniform plasma; (4) a rotating antenna for a means of generating a time average of uniform plasma; (5) a means of reducing microwave leakage around each feedthrough; (6) a means of water cooling substrates within the vacuum chamber during plasma etching without thermal damage to the substrate during the plasma etch process; (7) relating to claim 6, where the water tubes have a heat transfer relationship with the vacuum chamber with a means of microwave leakage prevention; (8) a means of controlling microwave power; (9) relating to claim 8, a potentiometer in series with the primary transfer side of the magnetron transformer for controlling the maximum power in the oven; (10) relating to claim 9, when plasma etching of organics from substrate; and finally, (11) relating to claim 10, the use of water cooling of the substrate. Beyond Ribner's patent, some studies [11][12][13][14][15][16][17][18][19][20][21][22] show that the microwave oven plasma reactor can be used for a multitude of processes and in many levels of oven reconstruction. e following sections describe the changes required to conventional domestic microwave ovens that range from minimal to major.…”
Section: Converted Microwave Oven Plasmamentioning
confidence: 99%
“…More recently (2017), carbothermic reduction of zinc oxide and zinc ferrites has also been reported [9]. Once the first conversion of a microwave oven into a plasma reactor was reported in 1978 [10], plasma-induced synthesis of inorganic compounds became available [11][12][13], followed by plasma modification of polymer surfaces [14]. Interest in the conversion of microwave oven for plasma processing has also been reported for plasma pyrolysis paper [15,16] and in-liquid plasma decomposition to produce hydrogen gas and carbon films [17][18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%
“…QA = 2 corresponds to permanent adhesion, QA = 1 corresponds to permanent adhesion, partially distributed throughout the contact interfaces, and QA = 0 corresponds to reversible or no adhesion becoming apparent. The use of GHz plasma generator (Ginn and Steinbock 2003;Hui et al 2005) on the other hand, results in relatively fast sample heating, which may prove detrimental for the fabrication procedures.…”
Section: Plasma Treatments and Quality Of Adhesionmentioning
confidence: 99%
“…In the past, the surface properties of PDMS has been modified using different methods such as coating of the inner walls, 7 attachment of active groups, 8 plasma oxidation, 9 thermal aging, 10 and chemical coating. 11 However, most methods require hours to process and to characterize before one can effectively use the devices.…”
Section: Introductionmentioning
confidence: 99%