Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

Chou, Yung-Ching; Chang, Hsuan-Chun; Liu, Cheng‐Liang; Chen, Wen‐Chang

doi:10.1039/c4py01213e

Cited by 187 publications

(133 citation statements)

References 37 publications

Supporting

Mentioning

133

Contrasting

Order By: Relevance

“…On the other hand, memories designed around electrets, that is, dielectric materials (usually polymers), or using polymer/electrolyte pairs exhibiting quasi-permanent electric charge or dipole polarization, have displayed the ability to perform as multilevel memories with different applied programming voltages. Although the observed switching ratios of over 10 8 have pushed them to the forefront of research on organic memories [27][28][29][30] , their unacceptably high programming voltages (up to ±200 V) and, most importantly, their low retention times (<10 4 s) are still major obstacles towards their integration into everyday electronics 31,32 . Storing charges in a metal or semiconductor layer by exploiting the principle of a floating gate located within the dielectric can be achieved with metallic nanoparticles, with each particle counting as a charge-storage site that is independent and isolated from other sites.…”

mentioning

confidence: 99%

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

et al. 2016

View full text Add to dashboard Cite

Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

show abstract

mentioning

confidence: 99%

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Organic electronic devices have been regarded as powerful candidates for the applications of soft electronics due to their advantages of decent flexibility, facile solution processability, and easy on‐grid integration with respect to the inorganic counterparts . Among the plethora of applications of organic semiconductors, memory is of particular interest since it is the essential building block of computation technology nowadays for big database storage device.…”

mentioning

confidence: 99%

Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior

et al. 2017

Self Cite

View full text Add to dashboard Cite

Solution-processable organic-inorganic hybrid perovskite materials with a wealth of exotic semiconducting properties have appeared as the promising front-runners for next-generation electronic devices. Further, regarding its well photoresponsibility, various perovskite-based photosensing devices are prosperously developed in recent years. However, most exploited devices to date only transiently transduce the optical signals into electrical circuits while under illumination, which necessitates using additional converters to further store the output signals for recording the occurrence of light stimulation. Herein, a nonvolatile perovskite-based floating-gate photomemory with a multilevel memory behavior is demonstrated, for which a floating gate comprising a polymer matrix impregnated with perovskite nanoparticles is employed. Owing to the well photoresponsibility introduced by the embedded nanoparticles, the device is enabled to access multiple wavelength response and the functionalities of recording power/time-dependent illumination under no vertical electrical field. Intriguingly, a nonvolatility of photorecording exceeding three months with a high On/Off current ratio over 10 can be achieved.

show abstract

“…To date, the majority of polymer semiconductors have shown only unipolar transport characteristics in their OFET devices. Ambipolar field‐effect transistors present unique advantages in the construction of complementary circuits due to their hole‐ and electron‐transport abilities . However, an imbalance between the hole transport (p‐type) and electron transport (n‐type) often restricts the real utility of ambipolar FETs.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processable Balanced Ambipolar Field‐Effect Transistors Based on Carbonyl‐Regulated Copolymers

Yang

Fang

Yang

et al. 2018

Chemistry An Asian Journal

View full text Add to dashboard Cite

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole- and electron-transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron-withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm V s , which suggested that these copolymers are promising ambipolar semiconductor materials.

show abstract

Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

Abstract: A review on polymeric charge storage electrets for constructing non-volatile organic field effect memory devices is presented.

Cited by 187 publications

References 37 publications

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior

Solution‐Processable Balanced Ambipolar Field‐Effect Transistors Based on Carbonyl‐Regulated Copolymers

Contact Info

Product

Resources

About