2023
DOI: 10.1007/s40042-023-00811-z
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Polymeric gate insulators to induce synaptic photoresponse of organic transistors

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Cited by 4 publications
(2 citation statements)
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“…We note that SI with hydroxyl groups such as PVP is generally used to induce photomemory effect in OPTs. [37][38][39] However, our VOPT (wet-etching time of 20 s) showed a much higher on/off current ratio of B10 5 than the reference device (wet-etching time of 2.5 s) of B10 because of the sufficiently reduced leakage current. In practical computing systems, the on/off ratio of the memory component is a crucial parameter that governs the number of memory levels.…”
Section: Resultsmentioning
confidence: 61%
“…We note that SI with hydroxyl groups such as PVP is generally used to induce photomemory effect in OPTs. [37][38][39] However, our VOPT (wet-etching time of 20 s) showed a much higher on/off current ratio of B10 5 than the reference device (wet-etching time of 2.5 s) of B10 because of the sufficiently reduced leakage current. In practical computing systems, the on/off ratio of the memory component is a crucial parameter that governs the number of memory levels.…”
Section: Resultsmentioning
confidence: 61%
“…The charge trapping at organic semiconductor (OSC)/insulator interfaces can modulate the synaptic weight [44,45]. For example, when light stimulation is applied in a photonic synapse, electron-hole pairs are generated, and the characteristics of the insulating layer, such as hydroxyl groups in poly (4-vinylphenol), can lead to the trapping of photogenerated electrons at the OSC/insulator interfaces [46,47]. Even after the light spike is removed, trapped charges recombined and disappear, exhibiting STP and characteristics.…”
Section: Synaptic Properties Of Biological and Artificial Synaptic De...mentioning
confidence: 99%