1998
DOI: 10.1002/(sici)1099-0518(199803)36:4<611::aid-pola10>3.0.co;2-p
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Polymers from multifunctional isocyanates 14. Alternating copolymers from isocyanato alkenes: Copolymerization of 2-propenyl isocyanate with trimethylsilyl methacrylate as electron acceptor monomer

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Cited by 5 publications
(3 citation statements)
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“…In this work, RAFT polymerization was selected to synthesize silylated methacrylic polymers with controlled molecular weight distributions, well‐defined chain architectures, and low polydispersity. Some studies of trialkylsilyl methacrylate homopolymerization and copolymerization have been reported16 for applications in photoresists of polymers,17–19 in dry etch resistance of polymers,20 and in antifouling paints 21–23. However, no studies, until now, have been reported on the living radical polymerization of trialkylsilyl methacrylate monomers.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, RAFT polymerization was selected to synthesize silylated methacrylic polymers with controlled molecular weight distributions, well‐defined chain architectures, and low polydispersity. Some studies of trialkylsilyl methacrylate homopolymerization and copolymerization have been reported16 for applications in photoresists of polymers,17–19 in dry etch resistance of polymers,20 and in antifouling paints 21–23. However, no studies, until now, have been reported on the living radical polymerization of trialkylsilyl methacrylate monomers.…”
Section: Introductionmentioning
confidence: 99%
“…Zachoval reported that the ion etching rate for poly(trimethylsilyl methacrylate) in oxygen was 1/35 of that of poly(methyl methacrylate) 1. In our laboratory copolymerisation of trimethylsilyl methacrylate with methacrylic acid and other functionalised monomers like 2‐propenyl isocyanate or maleic anhydride has been investigated for application in photoresists 11–13. Nothing is known about the copolymerisation behaviour of tert ‐butyl methacrylate with trimethylsilyl methacrylate or methacrylic acid, although knowledge of reactivity ratios and properties is a prerequisite for the design of 193 nm photoresist materials.…”
Section: Introductionmentioning
confidence: 99%
“…Zachoval published an ion etching rate for poly(trimethylsilyl methacrylate) in oxygen, which was 1/35 of that for poly(methyl methacrylate) 2. In previous papers we reported on the copolymerisation of trimethylsilyl methacrylate with functional monomers like 2‐propenyl isocyanate18 and maleic anhydride 19…”
Section: Introductionmentioning
confidence: 99%