Polysilicon FET devices for large area input/output applications

Depp, S.W.; Juliana, A.; Huth, B. G.

doi:10.1109/iedm.1980.189933

Cited by 26 publications

(10 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In 1979, amorphous silicon as a new active material was introduced by LeComber et al [ 13 ], which had profound implications for TFTs. In 1980, Depp et al reported polysilicon TFT which achieved good mobility and TFT characteristics [ 14 ]. In 1986, the first transistor based on organic semiconductor was reported [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

A Review for Compact Model of Thin-Film Transistors (TFTs)

Jiang

et al. 2018

Micromachines

View full text Add to dashboard Cite

Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

A Review for Compact Model of Thin-Film Transistors (TFTs)

Jiang

et al. 2018

Micromachines

View full text Add to dashboard Cite

show abstract

“…Inorganic materials, organic materials, and inorganic/organic hybrid materials have been used as semiconducting channels in thin film field‐effect transistors (TF‐FET). In particular, in the 1980s, International Business Machines Corporation (IBM) reported poly‐silicon based thin film transistors, and since then, silicon has been widely used as transistor material for the design and application of commercial devices . The structure of the field‐effect transistor (FET) is basically composed of three electrodes, and a current flows between two electrodes.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, in the 1980s, International Business Machines Corporation (IBM) reported poly-silicon based thin film transistors, and since then, silicon has been widely used as transistor material for the design and application of commercial devices. 1 The structure of the field-effect transistor (FET) is basically composed of three electrodes, and a current flows between two electrodes. An external applied voltage controls the current flow between the two electrodes.…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO₂ Layers

Park

You

Shim

2017

Bulletin Korean Chem Soc

View full text Add to dashboard Cite

Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the field‐effect mobility in the developed TFTs compared to TFTs with a normal bottom‐contact structure was ascertained. A bottom‐contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom‐contact structure was attributed to direct contact of the Au electrode with the active polymer layer.

show abstract

“…1 shows the roadmap of the TFT technology development. [17] There are four kinds of semiconductor materials being widely used as the channel layer of the TFT: 1) hydrogenated amorphous silicon (a-Si:H) TFT, which was first demonstrated in 1979 by P. Le Comber, W. Spear, and A. Ghaith [4] ; 2) low temperature polycrystalline silicon (LTPS) TFT, which started to boom since S. Depp succeeded in producing the first working device in 1980 [18] ; 3) organic TFT, which was first reported with polythiophene channel layer by A. Tsumura in 1986 [19] ; 4) metal-oxide TFT, which was first demonstrated with p-type SnO2 channel layer by Klasens in 1964 [20] . The first crystalline GIZO TFT fabricated on the YSZ (111) substrate was reported in 2003 by Hosono team [44] .…”

Section: Background Of Different Tft Technologiesmentioning

confidence: 99%

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

Li¹

View full text Add to dashboard Cite

Xin, etc. We were fighting together all the time for the Ph.D. degree. Likewise, Mr. Liu Qifei, Ms. Huang Yajun, Mr. Liu Mingzhe, Ms. Zhang Cancan, and my other life-long friends have shown me their support and encouragement from time to time. Their concern has given me the strength to overcome all the obstacles and frustration.Last but not the least, the unconditional love from my parents and other family members is always my most substantial backing. I want to appreciate their efforts and trust in me throughout my whole Ph.D. journey.

show abstract

Polysilicon FET devices for large area input/output applications

Cited by 26 publications

References 5 publications

A Review for Compact Model of Thin-Film Transistors (TFTs)

A Review for Compact Model of Thin-Film Transistors (TFTs)

Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO₂ Layers

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

Contact Info

Product

Resources

About

Polysilicon FET devices for large area input/output applications

Cited by 26 publications

References 5 publications

A Review for Compact Model of Thin-Film Transistors (TFTs)

A Review for Compact Model of Thin-Film Transistors (TFTs)

Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO2 Layers

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

Contact Info

Product

Resources

About

Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO₂ Layers