Polysilicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition: Effect of Substrate Temperatureand Annealing Temperature

Tran, N. T.; Keyes, M. P.

doi:10.1002/pssa.2211260238

Cited by 7 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The conventional way to grow mc-Si requires high temperature (>600 • C) and is slow [3]. Therefore, mc-Si thin films are often formed by post crystallization of amorphous Si (a-Si) or nanocrystalline silicon; both are usually prepared by plasma enhanced chemical vapor deposition (PECVD) at temperatures below 300 • C [4]. High quality mc-Si has been achieved by furnace annealing of PECVD grown a-Si thin films.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

et al. 2018

View full text Add to dashboard Cite

Low-temperature growth of microcrystalline silicon (mc-Si) is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si) thin films crystallized by furnace annealing and flash lamp annealing (FLA) at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD). Reflectance measurement indicated characteristic peak in the UV region~280 nm for the furnace annealed (>550 • C) and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD) measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202) with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 • C, 650 • C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

show abstract

Section: Introductionmentioning

confidence: 99%

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

et al. 2018

View full text Add to dashboard Cite

show abstract

“…[17][18][19] In heteroepitaxial growth, only a few investigators have examined the effect of the substrate temperature on the thin film growth and morphology such as Cr on Cu substrates, [20] indiumdoped tin oxide films [21] and plasma enhanced chemical vapor deposition (PECVD) polycrystalline Si films. [22] Yet, only Afify et al [21] noted a distinct change in the island morphology due to the substrate temperature, where dendritic growth was noted at higher temperatures for indium-doped tin oxide films. A possible reason why this dramatic effect of temperature on the film morphology has not been widely observed in other systems could be that the temperature ranges previously investigated were considerably smaller (only ~200°C) than the temperature range we examined (150°C to 1000°C).…”

Section: Discussionmentioning

confidence: 99%

Nano-Oxidation of Cu(100) Investigated by In situ UHV-TEM

Zhou

Yang

2004

MSF

View full text Add to dashboard Cite

The initial stages of the oxide formation were investigated by oxidizing Cu(100) thin films in a specialized in situ ultra-high vacuum (UHV) TEM at oxygen partial pressure of 5x10 -4 torr and a temperature range of 150°C to 1000°C. Epitaxial Cu 2 O islands formed on Cu(100) where the morphology can be either triangular, huts, rods or pyramids depending only on the oxidation temperature. Of particular focus was the formation of nanorods at 600°C, that was observed to change from initially square shaped islands to elongated islands at a critical size of 114nm. The experimental data on the elongation of Cu 2 O islands agree with the energetic calculations based on the balance between surface/interface energies and the elastic strain relief in the three dimensional islands.

show abstract

“…During oxidation at low temperatures (T < 400°C), the oxide islands adopt triangular shape, but at temperatures higher than 400°C, the islands have a more symmetrical geometry. Only a few investigators have examined the effect of the substrate temperature on the thin film growth and morphology such as Cr on Cu substrates [11], indium-doped tin oxide films [12] and plasma enhanced chemical vapor deposition (PECVD) polycrystalline Si films [13]. Yet, only Afify et al [12] noted a distinct change in the island morphology due to the substrate temperature, where dendritic growth was noted at higher temperatures for indium-doped tin oxide films.…”

Section: Discussionmentioning

confidence: 99%

Dramatic Effect of Temperature on Metal-oxide Nanostructures: Oxidation of Cu Films by In situ UHV-TEM

Zhou

Yang

2002

MRS Proc.

View full text Add to dashboard Cite

We investigated the temperature effect on the Cu2O morphology by oxidizing Cu(100) thin films at the temperature ranging from 350°C to 1000°C. We demonstrated that dramatically different morphologies of oxide nanostructures can be achieved by modifying the oxidation temperature. Quasi-one-dimensional Cu2O structures with aspect ratios as large as 40:1 were formed at the oxidation temperature of 600°C. The in situ observation data on the elongation of Cu2O islands agree with the energetic calculations based on the balance between surface and interface energies and the elastic stress relaxation in the three dimensional islands.

show abstract

Polysilicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition: Effect of Substrate Temperatureand Annealing Temperature

Cited by 7 publications

References 15 publications

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

Nano-Oxidation of Cu(100) Investigated by In situ UHV-TEM

Dramatic Effect of Temperature on Metal-oxide Nanostructures: Oxidation of Cu Films by In situ UHV-TEM

Contact Info

Product

Resources

About