2017 International Conference on Communication and Signal Processing (ICCSP) 2017
DOI: 10.1109/iccsp.2017.8286660
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Polysilicon piezoresistive MEMS pressure sensor: Study of analytical solutions for diaphragm and design & simulation

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Cited by 9 publications
(5 citation statements)
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“…In brief, it comprises a 2-µm thick single-crystalline silicon device layer with a complete Wheatstone bridge configuration. This device layer is anodically bonded to a glass wafer containing cavities located beneath the pressure sensing membranes 46 . The sensor element has been seamlessly integrated into a probe, and the materials exposed to the environment comply with biocompatibility standards, such as USP Class VI and/or ISO-10993.…”
Section: Design Of the Sensor Element And Sensor Packagingmentioning
confidence: 99%
“…In brief, it comprises a 2-µm thick single-crystalline silicon device layer with a complete Wheatstone bridge configuration. This device layer is anodically bonded to a glass wafer containing cavities located beneath the pressure sensing membranes 46 . The sensor element has been seamlessly integrated into a probe, and the materials exposed to the environment comply with biocompatibility standards, such as USP Class VI and/or ISO-10993.…”
Section: Design Of the Sensor Element And Sensor Packagingmentioning
confidence: 99%
“…For piezoresistive sensors, the sensitive diaphragms above the vacuum cavities are pressured and then generate stress. The variation of piezoresistors caused by the applied pressure is transferred into voltage due to the piezoresistive effect [28,29]. Therefore, the performance of a piezoresistive sensor depends largely on the pressure sensitive diaphragm.…”
Section: Design and Fabrication Of The Micro Sensormentioning
confidence: 99%
“…The design is characterised by an annularly grooved membrane supported via a square central mass as shown in Fig1a and Fig 1b. Square diaphragm are easy and cost effective to fabricate for pressure sensors using anisotropic wet etchants as they have better sensitivity and produce relatively higher stress [20]. The substrate used for the sensor chip is N-type silicon wafer due to its unique mechanical properties [15].…”
Section: Structure Designmentioning
confidence: 99%