Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth

Abstract

4H-SiC single crystal was successfully grown with source powder modified by the pretreatment process in order to improve polytype stability of SiC crystal. To increase C/Si ratio in SiC source powder, SiC source powder was mixed with liquid carbon source and then pre-heated at 1200°C. SiC single crystal grown with modified source powder exhibited complete 4H polytype and the crystal quality of SiC crystal grown by modified source power was definitely better than conventional source powder

Identification of Polytype and Estimation of Carrier Concentration of Silicon Carbide Wafers by Analysis of Apparent Color using Image Processing Software

“…Details of SiC ingot growth, wafer slicing and polishing methods can be found elsewhere. [9][10][11]14 All SiC wafers were attached to a transparent (clear) acrylic plate for photographing. The SiC wafers were photographed outdoors, in sunlight, using a digital single-lens (DSLR) reflex camera (Sony α33) under the automatic exposure mode.…”

“…[4][5][6][7] Polytype transformation and polytype controlled CVD (chemical vapor deposition) and PVT (physical vapor transport) techniques has been widely studied for decades. [8][9][10][11][12][13] Inclusion of different polytypes in the same crystal causes serious quality deterioration in terms of electrical properties and nucleation of other defects during device fabrication process steps. As a result, it will negatively affect the commercialization of SiC devices.…”