Pore initiation and growth on n-InP(100)

Preparation and specific properties of single crystalline metallic nanowires

“…a square organization of Al 2 O 3 pores [37]. The principle of controlling the formation of a nanostructure by inducing a local defect was also employed by Lehmann and coworkers for Si [38] or Schmuki et al for InP [39]. This work reviews the results obtained by the recently established novel method for the fabrication of metallic nanostructures from directionally solidified and electrochemically treated eutectics.…”

Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching

“…The porous III-V compounds are most noteworthy and might have applications beyond nonlinear optics, because there are possible pore structures which cannot be produced with Si [7]. Porous GaAs [8][9][10][11][12][13][14] and porous InP [15][16][17] to the bulk materials have been revealed [8,18]. The present work is an extension of previous works.…”

Electrochemical Formation of Ordered Pore Arrays in InP in KCl

“…Much of the initial InP surface appears to be intact but it is regularly penetrated by a high density of surface pits (~200 μm -2 ). These surface pits are said to form at defect sites on the surface (22), and result in the formation of porous domains below the surface (16). Figure 5 (b) is an SEM micrograph of the (100) surface of a porous layer formed at 3.0 V but with an etch time that was increased by a factor of three, resulting in a total etch time of 12 minutes.…”