Structural disorder is one of the major obstacles for band-like transport in semiconductor nanocrystal (NC) solids. However, systematic study of the effect of structural disorder on electronic properties is lacking. Here, we use a tightbinding model that explicitly incorporates energetic and positional disorders to evaluate quantitatively the effects of disorder on electron transport in semiconductor NC assemblies. The density of states and wave function delocalization are analyzed to identify the mobility edges, if they exist. We summarize the results in phase diagrams of the localization− delocalization transition for different superlattice structures. We find that the critical disorder at the transition point mainly depends on short-range order, not the long-range order of the superlattice. We also use an effective-mass model to calculate the coupling energy between adjacent nanocrystals. The calculation reveals that a red-shift of the excitonic peak in the optical absorption spectrum is not directly related to the magnitude of electronic coupling. For the specific case of PbSe nanocrystals coupled by ethanedithiol ligands, we conclude that the disorder is too large to allow delocalized states. Lastly, we analyze the effects of valley degeneracy and intervalley coupling, both within a NC and across adjacent NCs, using a phenomenological model. The impact of multiple valleys on charge transport depends on the exact nature of the coupling of distinct valleys, which is unknown. We estimate the magnitude of the coupling and conclude that the presence of multiple valleys has a minor impact on the wave function delocalization. Overall, we expect that band-like transport should be attainable with suitable ligands and proper surface passivation.