Zn−Ni secondary battery is a promising candidate as next generation of energy storage battery. However, suffering from the poor cycle performance, its commercialization remains rather challenging. The severe dendrite growth of Zn anode and the rapid capacity decay caused by its uncontrollable dissolution and poor electronic conductivity of ZnO are the main factors. Herein, we report a novel Indium (In) doped ZnO/rGO anode material to inhibit ZnO dissolution through the generated C−O−Zn bond between ZnO and graphene. Meanwhile, the capacity decay decline due to the enhanced electronic conductivity of ZnO by the In doping and combination of graphene. As a result, In doped ZnO/rGO anode material delivers a high specific capacity of 643.4 mAh g−1 (coulombic efficiency 97.63 %) and remains 531.3 mAh g−1 after 125 cycles at 0.5 C, which are significantly higher than bare ZnO.