“…5,7,[20][21][22] Increasing film thickness due to mechanical stress relaxation in porous film is important for piezoelectric microelectromechanical systems (MEMS) applications because the output signal is increased by increasing the film thickness and the electromechanical response is enhanced by local elastic relaxations, 12,[23][24][25] decreasing permittivity can provide a better figure of merit for pyroelectric detectors, 16,26 the self-assembly of nanodots arrays can be used in memory technology, 17,18 porous ferroelectric films can be used to create gas sensors, [27][28][29] and different composite structures in which a porous ferroelectric material is filled with another material. [30][31][32][33] Porous structures in ferroelectric films can be achieved using sol-gel techniques. 10,11,13,14,18,34 Organic compounds known as porogens are added to a precursor solution and are subsequently incorporated into the growing metal-oxide-metal network during film formation as a result of phase segregation.…”