2017
DOI: 10.1063/1.4998965
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Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

Abstract: The increasing need for miniaturization, reliability, and cost efficiency in modern telecommunications has boosted the idea of system-on-chip integration, incorporating the RF front-end circuitry and the passive elements such as RF transmission lines, inductors, antennas, and filters. However, the performance of the passive elements of these circuits is highly degraded when integrated on standard CMOS Si, due to its low resistivity. Porous silicon (PSi) has emerged as a promising local substrate material for t… Show more

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Cited by 6 publications
(5 citation statements)
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“…An electrolyte of 60% ethanol and 40% HF (50% in H 2 O) is used with a constant current density of 80 mA cm −2 . This is a typical process for developing porous Si in a sponge-like form with a porosity of 63% and pore sizes in the few nanometer range [31,32]. Under the described conditions, the thickness of the porous Si layer depends solely on the duration of the anodization process.…”
Section: Porous Simentioning
confidence: 97%
“…An electrolyte of 60% ethanol and 40% HF (50% in H 2 O) is used with a constant current density of 80 mA cm −2 . This is a typical process for developing porous Si in a sponge-like form with a porosity of 63% and pore sizes in the few nanometer range [31,32]. Under the described conditions, the thickness of the porous Si layer depends solely on the duration of the anodization process.…”
Section: Porous Simentioning
confidence: 97%
“…Porous Si (PSi) is another popular material that can be formed on an Si wafer and provides an adequate platform for the integration of high‐performance RF passives . PSi exhibits adjustable properties, which can be adjusted to meet the RF requirements such as low dielectric permittivity, high resistivity, CMOS compatibility, and local information on Si wafer in a CMOS‐compatible way.…”
Section: Recent Progress In Substrate Technologiesmentioning
confidence: 99%
“…(A) Dielectric permittivity (B) Loss tangent in the frequency range of 1 to 40 GHz and 140 to 210 GHz of PSi extracted from broadband electrical measurements …”
Section: Recent Progress In Substrate Technologiesmentioning
confidence: 99%
“…The PSi layer thickness and porosity can be quite wellcontrolled by adjusting current density, HF concentration and temperature of anodization. PSi has potential applications in many fields, such as photonics, optoelectronics, photovoltaics, medicine and sensing (1)(2)(3)(4)(5)(6)(7)(8)(9).…”
Section: Introductionmentioning
confidence: 99%