Porous Silicon and Solar Cells

Dzhafaröv, T. D.; Bayramov, Ayaz

doi:10.1007/978-3-319-71381-6_95

Cited by 15 publications

(7 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Figure 7A shows the prominent discoloration, and the representative SEM image in Figure 7B shows the porous structures. This surface morphology has been well documented for silicon etching and can be a preferred morphology for solar cell applications (16,17). It has been suggested that the HNA chemistry can aggressively etch defects, rendering P + silicon susceptible to pitting as it is known to contain numerous lattice defects (10).…”

Section: Wafer Discolorationmentioning

confidence: 97%

An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch

Bahena¹,

Fijal²,

Tyler³

et al. 2022

ECS Trans.

View full text Add to dashboard Cite

Backside illuminated technologies have been used in complementary metal–oxide–semiconductor image sensors for years and are finding a renewed interest and are being investigated for imagers and detectors in light detection and ranging applications. Coupled with the improved performance facilitated through 3D integration, the thinning of bonded wafers has become a crucial processing step. In this study, an alternate and potentially more cost-effective method has been explored using an HNA (hydrofluoric, nitric, acetic)wet etch for backside thinning of bonded epitaxial P+/P- silicon wafers. By utilizing a dopant concentration gradient, P+ silicon is selectively etched and P- silicon can be effectively used as an etch stop. Several HNA concentrations were explored to determine ratios that yield high P+ silicon etch rates while maintaining high P+/P- selectivity. Furthermore, bath life, spiking scheme, and repeatability were examined using a large wafer sample size with the goal of developing a full process flow.

show abstract

Section: Wafer Discolorationmentioning

confidence: 97%

An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch

Bahena¹,

Fijal²,

Tyler³

et al. 2022

ECS Trans.

View full text Add to dashboard Cite

show abstract

Section: Aspects Min Miner Scimentioning

confidence: 99%

Nano-Nickel as a Catalyst for the Ni/ PS/Si Hydrogen Fuel cells

TD¹

2023

AMMS

View full text Add to dashboard Cite

In this paper we report the results on fabrication and output characteristic of novel Direct Ammonia Fuel Cells (DAFC) based on Porous Silicon (PS)/nano-nickel catalyst structure. Output parameters of the structures were measured at Ammonia Solution (AS) concentration of 0-25%. AS/Ni/PS/Si fuel cell exhibits the open-circuit voltage of 0.85V and peak power density of 0.66mW/cm 2 at ammonia solution concentration of 25% at room temperature. Inverse dependence of output power density on Ni film thickness was observed. Mechanisms of generation of the electricity, as well as Ni thickness dependence in Ni/PS/Si cells, exposed directly hydrogen-containing composition as a fuel are discussed.

show abstract

“…While the quantum-confinement model remains a cornerstone, ongoing research has expanded our knowledge by investigating the influence of various factors such as surface passivation, surface recombination velocities and fabrication techniques on the tuning of the PL properties. These findings paved the way for diverse applications utilizing PSi as a substrate, spanning technologies such as light-emitting diodes [ 4 , 5 ], photodetectors [ 6 , 7 , 8 , 9 , 10 , 11 ], solar cells [ 12 , 13 , 14 , 15 , 16 ] and biomedical applications [ 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Tsai,

Lee,

Lin

et al. 2024

Materials

View full text Add to dashboard Cite

Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene glycol (EG) and N,N-dimethylformamide (DMF) were employed as solvents in hydrofluoric acid (HF)-based silicon etching. The PL peak position exhibited progressive blue-shifting with increasing ethanol and EG concentrations, accompanied by reductions in the secondary peak intensity and emission linewidth. Comparatively, changes in n-butanol concentration only slightly impacted the main PL peak position. Additionally, distinct morphological transitions were observed for different solvents, with ethanol and n-butanol facilitating uniform single-layer porous structures at higher concentrations in contrast to the excessive etching caused by EG and DMF resulting in PL quenching. These results highlight the complex interdependencies between solvent parameters such as polarity, volatility and viscosity in modulating PSi properties through their influence on surface wetting, diffusion and etching kinetics. The findings provide meaningful guidelines for selecting suitable solvent conditions to tune PSi characteristics for optimized device performance.

show abstract

Porous Silicon and Solar Cells

Cited by 15 publications

References 46 publications

An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch

An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch

Nano-Nickel as a Catalyst for the Ni/ PS/Si Hydrogen Fuel cells

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Contact Info

Product

Resources

About