Porous silicon as an intermediate layer for thin-film solar cell

Bilyalov, R.; Stalmans, Lieven; Beaucarne, G.; Loo, Roger; Caymax, Matty; Poortmans, Jef; Nijs, Jo

doi:10.1016/s0927-0248(00)00130-6

Cited by 55 publications

(28 citation statements)

References 9 publications

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“…The annealing temperature is above the Al-Si eutectic temperature and the gettering mechanism is that of segregation gettering [9]. Gettering impurities from solar grade monocrystalline silicon wafers can be done by application of a simple PS layer as was reported elsewhere [6,10]. However, better results and significant improvement of the transport parameters were obtained with PS-Al gettering.…”

Section: Resultsmentioning

confidence: 99%

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Khedher

Hajji

Bessaı̈s

et al. 2005

phys. stat. sol. (c)

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PACS 66.30.Jt, 81.05.Rm, 81.40.Rs, 81.65.Tx In this paper, we report a study on the possibility of gettering transition metal impurities from solar grade crystalline silicon (Si). Porous silicon layers were formed by the stain-etching method on both sides of the Si wafer. Aluminum diffusion was done throughout the PS layer in an infrared furnace under a (N 2 /O 2 ) controlled atmosphere. This enables to getter eventual metal impurities towards the PS layer. The gettering effect was evaluated by measuring the majority carrier density and mobility and the minority carrier diffusion length (L d ) of the Si substrate. For this purpose, Wander Pauw and Hall Effect measurements together with the Light Beam Induced Current (LBIC) technique were used. We noticed that the best gettering corresponds to a heat treatment at 850 ˚C for 30 min; in that case an evident decrease of the majority carrier density and an enhancement of the mobility were observed. After gettering, we found an apparent improvement of the minority carrier diffusion length. These results give evidence of the effectiveness of external gettering treatments by combining (Al -PS) layer for an efficient gettering effect in solar grade monocrystalline Si.

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Section: Resultsmentioning

confidence: 99%

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Khedher

Hajji

Bessaı̈s

et al. 2005

phys. stat. sol. (c)

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“…It may be feasible to mitigate solvent doping effects by postgrowth gettering [458], thus allowing the use of melt components selected for other criteria besides doping. Also, porous silicon layers formed on silicon substrates can act as impurity sinks [459] to reduce excessive doping resulting from the use of certain solvents. In multicomponent melts, there is the possibility of stratification due to liquid-phase miscibility gaps; see, for example, [460].…”

Section: Silicon and Sige Lpe And Solution Growth With Main Applicatimentioning

confidence: 99%

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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“…However, the realization of porous silicon requires only simple means: an anodization of single-crystal silicon in hydrofluoric acid and methanol. Its application extended in several fields such as the electroluminescent diodes [ 1 ], the thermal sensors [ 2 ], of gas [ 3 ], in technique SOI [ 4,5 ], and the photovoltaic [6][7]. Growth of the layers epitaxy this fact by VPE or epitaxy in liquid phase (LPE) on the porous, it remained however to find a mean to separate the layer epitaxy in order to stick it on a substrate to low cost like ceramics.…”

Section: Introductionmentioning

confidence: 99%

Characterization by SIMS of silicon Layer deposited by VPE on SiP in the Solar cells with thin layers

Madani¹,

Bensaoula²,

Benkhenafou³

et al. 2015

Proceedings of the 2nd International Conference on Green Materials and Environmental Engineering

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Abstract-Classically, in the field of photovoltaic, porous silicon (PS) is used as an antireflecting layer, but these last years, we are interested in a new application of this material, which allows, by technologies very different from proceed usual to detach from the singlecrystal thin layers from a substrate. An electrochemical attack is carried out on a silicon substrate, with times and densities of current variable so as to obtain two layers of gradual porosities being formed from surface (strong porosity in-depth). We carry out then a hydrogenation (to passivate the structure), an epitaxy in liquid phase (LPE) or Vapor Phase Epitaxy (VPE), and then we carry out the cell. During the temperature treatment high, porous silicon is recristallized partially. Then separation is made once the cell carried out, by sticking a transparent plastic film on surface and by applying a weak force (the PS being used as sacrificial layer). In this study, a characterization by secondary spectroscopy of mass of the ions (SIMS) informs us about the level of doping and the concentration of the carriers, and, electronic microscopy has sweeping (SEM) informs us about porous morphologies of these layer.

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Porous silicon as an intermediate layer for thin-film solar cell

Cited by 55 publications

References 9 publications

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Liquid-Phase Epitaxy

Characterization by SIMS of silicon Layer deposited by VPE on SiP in the Solar cells with thin layers

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