Porous silicon Bragg mirrors on single- and multi-crystalline silicon for solar cells

Ivanov, I.I.; Skryshevsky, V. A.; Nychyporuk, T.; Lemiti, M.; Makarov, A. V.; Klyui, N.I.; Tretyak, O. V.

doi:10.1016/j.renene.2012.12.031

Cited by 31 publications

(16 citation statements)

References 30 publications

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“…The experimentally measured absorption coefficient AL is about 10 2 -10 3 /cm in the wavelength range 1.1 m < < 2.5 m. Let us consider the infrared light trapping scheme that provides at least 100 passes of light through the active region of a modified device. The solar cells with the improved light trapping scheme can be achieved via the application, for example, Bragg mirrors [31][32][33]. The calculation of the additional photocurrent according to (2) with = 0 gives AL ∼ 2.4-5 mA/cm 2 .…”

Section: Effect Of Additional Infrared Photogeneration In Al On the Mmentioning

confidence: 99%

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Kozinetz¹,

Skryshevsky²

2018

Ukr. J. Phys.

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The insertion of a thin amorphized layer (AL) in the space charge region of a silicon solar cell is proposed as a way to improve the conversion efficiency due to the impurity photovoltaic effect. Previously, this approach had been applied to a cell with a layer inserted in the emitter by the ion implantation. The insertion of such layer in the space charge region is founded to be preferable, because a better control over the recombination (via energy levels in the band gap and local states of interfaces) can be achieved. The parameters of a modified device are investigated by the numerical simulation, and it is concluded that the layer parameters have a crucial influence on the cell conversion efficiency. Based on our simulation results, the optimal AL and the height of barriers are determined. In such a case, the short circuit current density is improved due to the absorption of photons with energy less than a silicon band gap of 1.12 eV in AL, whereas the open circuit voltage and fill factor remain unchanged. Theoretically, the increase in the efficiency by 1-2% is achievable. In the non-optimal case, the degradation of a short circuit current and the fill factor eliminate the positive effect of an additional photogeneration in AL.K e y w o r d s: amorphized layer, space charge region, + -silicon solar cell.

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Section: Effect Of Additional Infrared Photogeneration In Al On the Mmentioning

confidence: 99%

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Kozinetz¹,

Skryshevsky²

2018

Ukr. J. Phys.

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“…Moreover, the PS layer serves as luminescence down converter (see handbook chapter "▶ Photoluminescence of Porous Silicon") transforming the blue solar light to red-orange light which generates additional electron-hole pairs (Svrcek et al 2004). Application of porous silicon Bragg mirrors on backside of silicon solar cells can improve the efficiency (Ivanov et al 2013). It is also important to consider the passivation and gettering properties of Si-H and Si-O bonds on pore surfaces (see handbook chapter "▶ Porous Silicon Gettering") which can increase the lifetime of minority carriers (Remache et al 2010;Weiying et al 2011).…”

Section: Porous Silicon In Solar Cellsmentioning

confidence: 99%

Porous Silicon and Solar Cells

Dzhafaröv¹

2014

Handbook of Porous Silicon

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“…This recent change therefore forces the industry to adopt new technologies which are reliable and compatible with cost effective industrial processes. However, light trapping within the cell is necessary to obtain the light absorption in the range of 800 to 1200 nm [4,7]. Therefore, to replace the classical Al BSF, an effective back reflector structure needs to be developed and implanted successfully into the cell [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Distributed Bragg reflector is a structure composed of a multilayer stack of high and low refractive index layers. Several configurations were published: Bragg mirrors implemented with (i) amorphous silicon and silicon oxide [1], (ii) SiN x and SiO x dielectric [12] (iii) porous silicon of two alternating porosities [2,7,[13][14][15]. The design of porous silicon Bragg mirror is complex and requires appropriate control of optical parameters of its constituent layers, and it produces many losses at the interface due to the excessive stack of porous silicon layers [3,16].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells

Remache¹,

Nychyporuk

Guermit³

et al. 2016

Materials Science-Poland

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The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (R T ) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (R B ) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiN x ) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiN x achieved approximately 56 % corresponding to an improved R B of up to 83 %. The PS formation process in combination with the PECVD SiN x , can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells.

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Porous silicon Bragg mirrors on single- and multi-crystalline silicon for solar cells

Cited by 31 publications

References 30 publications

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Porous Silicon and Solar Cells

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells

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Porous silicon Bragg mirrors on single- and multi-crystalline silicon for solar cells

Cited by 31 publications

References 30 publications

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Porous Silicon and Solar Cells

Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

Contact Info

Product

Resources

About

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells