Porous silicon fabrication by anodisation: Progress towards the realisation of layers and powders with high surface area and micropore content

Loni, A.; Defforge, Thomas; Caffull, E.; Gautier, Gaël; Canham, Leigh

doi:10.1016/j.micromeso.2015.03.006

Cited by 31 publications

(14 citation statements)

References 18 publications

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“…Both structural and chemical properties of PSL are key parameters in order to obtain the desired properties (Handbook of Porous Silicon, p. 202/203 [5]). Electrochemical parameters (current density, electrolyte composition…) allow a fine tuning of the micro-or nanostructure: porosity, pore size or specific surface area [6]. On the other hand, the control of the surface chemistry (through oxidation, carbonization or metallization) is also indispensable to functionalize and stabilize PSL with the expectation of a better reliability [7].…”

Section: Introductionmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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+3620 361 7876This paper suggests the evaluation of morphological parameters of porous silicon layers (PSL) using spectroscopic ellipsometry from UV to midinfrared optical range. PSL were prepared by electrochemical etching of monocrystalline silicon wafers in hydrofluoric acid-based electrolyte. Measuring with an optical and an infrared ellipsometer with a wide spectral range permits an accurate characterization of PSL properties from the top surface to the bottom of the layer with thicknesses from several hundred nanometers up to a few tens of micrometers. Several different optical models for ellipsometric evaluations were developed to determine the thickness, the average porosity, the in-depth porosity gradient, the oxidation level and the surface roughness of the PSL. Porosity was modeled with multiple effective medium layers by varying ratio of crystalline silicon, void and oxidized silicon wherever needed. Thin PSL (< 5 μm) shows no impact of current density on porosity and thickness. However, evaluation of thick PSL (20 -50 μm) highlights the in-depth porosity gradient. Thickness values were also cross-checked with electron microscopy confirming the proposed ellipsometric models. Additionally, different oxidation techniques have also been compared in terms of oxidation level and void content. Volume expansion during PSL oxidation follows exactly the same behavior as that during the oxidation of planar silicon wafers.

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Section: Introductionmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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show abstract

“…The porous silicon can be produced by formation of Si-Si, Si-O, Si-H, and Si-F chemical reactions at the interface of silicon and electrolyte [2]. Among these chemical species, Si-O, Si-H, and Si-F species can protect the silicon crystal surface [4][5].…”

Section: Introductionmentioning

confidence: 99%

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

et al. 2016

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“…However, electronic transport properties in these semi-insulating materials limit the electro-luminescence efficiency [6]. PSNs can also be used in optics and electro-optics due to their tunable refractive index and high internal surface [7,8]. Si nanowires are also promising candidates for one-dimensional superconductor-semiconductor hybrid systems, being optimal platforms for realizing Majorana zero modes [9,10].…”

Section: Introductionmentioning

confidence: 99%

Engineering Porous Silicon Nanowires with Tuneable Electronic Properties

et al. 2020

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Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs.

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Porous silicon fabrication by anodisation: Progress towards the realisation of layers and powders with high surface area and micropore content

Cited by 31 publications

References 18 publications

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

Engineering Porous Silicon Nanowires with Tuneable Electronic Properties

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