Porous silicon for electrical isolation in radio frequency devices: A review

Gautier, Gaël; Leduc, P.

doi:10.1063/1.4833575

Cited by 42 publications

(15 citation statements)

References 109 publications

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“…For instance, PSL can be used as sensors [1], as anodes in Lithium-ion battery [2], or in microelectronics thanks to its electrical insulating properties [3,4]. Both structural and chemical properties of PSL are key parameters in order to obtain the desired properties (Handbook of Porous Silicon, p. 202/203 [5]).…”

Section: Introductionmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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+3620 361 7876This paper suggests the evaluation of morphological parameters of porous silicon layers (PSL) using spectroscopic ellipsometry from UV to midinfrared optical range. PSL were prepared by electrochemical etching of monocrystalline silicon wafers in hydrofluoric acid-based electrolyte. Measuring with an optical and an infrared ellipsometer with a wide spectral range permits an accurate characterization of PSL properties from the top surface to the bottom of the layer with thicknesses from several hundred nanometers up to a few tens of micrometers. Several different optical models for ellipsometric evaluations were developed to determine the thickness, the average porosity, the in-depth porosity gradient, the oxidation level and the surface roughness of the PSL. Porosity was modeled with multiple effective medium layers by varying ratio of crystalline silicon, void and oxidized silicon wherever needed. Thin PSL (< 5 μm) shows no impact of current density on porosity and thickness. However, evaluation of thick PSL (20 -50 μm) highlights the in-depth porosity gradient. Thickness values were also cross-checked with electron microscopy confirming the proposed ellipsometric models. Additionally, different oxidation techniques have also been compared in terms of oxidation level and void content. Volume expansion during PSL oxidation follows exactly the same behavior as that during the oxidation of planar silicon wafers.

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Section: Introductionmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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“…Depending on the substrate type and the etching parameters, numerous different pore morphologies can be obtained, resulting in a wide range of applications over the past few decades. Macroporous silicon, in particular with high aspect ratio (AR), has been used in many technical fields, such as microelectromechanical systems (MEMS) devices [1,2], biosensors [3,4], fuel cells [5,6], microelectronics [7] and photonic crystals [8,9]. All these applications require the development of high-quality pore structures with fast etching speed, which is one of the most important factors in effective mass production.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Wen-bing

et al. 2018

Materials Research Letters

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Etching rate is a major concern for the effective mass production of high-aspect-ratio microstructures, especially in p-type silicon. In this work, controlled electrochemical growth of high-aspect-ratio (from 15 to 110) macropores in p-type silicon at ultrafast etching rate (from 16 to 30 µm min −1 ) has been studied. Based on current-burst-model, pore formation was systematically investigated from the nucleation phase to stable pore growth. Good macropores with depth up to 180 µm and aspect ratio beyond 110 was achieved in just 11 min. This sets a new record on state-of-the-art p-type silicon microfabrication and can promote the development of microdevices. IMPACT STATEMENTHigh-aspect-ratio macropores at ultrahigh etching rate were achieved in p-type silicon, which sets a novel record among p-type silicon microfabrication and can promote the effective mass production of microdevices. ARTICLE HISTORY

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“…In these ICs, high-performance passive devices, such as transmission lines [13], [14], inductors [15], and filters [16], play a crucial role. The need for more compact circuits has created a need for the engineering of high capacitance density capacitors, since they, along with other passives, take up most of the die space in such applications.…”

Section: Introductionmentioning

confidence: 99%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

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We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

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Porous silicon for electrical isolation in radio frequency devices: A review

Cited by 42 publications

References 109 publications

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

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