Porous Silicon for Sensor Applications

Nassiopoulou, A. G.

doi:10.1007/1-4020-3562-4_11

Cited by 4 publications

(3 citation statements)

References 35 publications

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“…One of the most widely used methods for estimating the carrier lifetime is the open circuit voltage decay [11]. A pulsed laser with a wavelength of) 900 nm (, a width of (2 μs) and a pulse difference of )120 μs( [12], was used.…”

Section: Response Timementioning

confidence: 99%

Study the impact of radiation on the electrical properties of SnO2/Si reagents

2022

pnr

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This research examined the effect of irradiation on the synthetic properties of the SnO2/n-Si membrane. The prepared membrane was prepared by vacuum fumigation and irradiated with 1.33Mev energy Gama rays, time periods and radiation doses (3h × 14Gy), (24 h × 14 Gy) and (3d × 14Gy). Synthetic properties were studied through XRD screening before and after irradiation. The results of the study showed that exposure of the membrane to Gama rays and through XRD screening for three hours resulted in a decrease in relative intensity at the angle and a severe decrease in relative intensity at the angle. ( 150) with a slight increase in the intensity value at the angle Ɵ=44.24982 this indicates crystal growth when irradiation increases for a day. When irradiated for three days, the relative intensity at the angle decreased Ɵ=59.18402 indicating crystal defects that reduced the value of crystallization, accompanied by an increase in intensity at the Ɵ=44.24982 and Ɵ=25.87862 angles. Increased irradiation has, by examining XRD, clearly affected the improvement of synthetic properties. The characteristics of the current-voltage were also examined by forward and reverse biases in darkness and reverse only when illuminated by the M1 light current equal to 0.24. From the M4 specimen, there is an increase in the light current. The value of the light current at radiation increased for one day at the same intensity to the 0.31 and this value continued to improve when irradiated for three days, as the value rose to 0.45. (1-2-3) The time of inertia decreased from (2.3) to (1.2) and this time of inertia at irradiation for three days is evidence of many disruptions that have led to an increase in the total value of the detector resistance resulting in an increase in the time of inertia.

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Section: Response Timementioning

confidence: 99%

Study the impact of radiation on the electrical properties of SnO2/Si reagents

2022

pnr

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“…Special type of the sensors is the porous silicon nanostructure prepared with pre-defined properties (porosity, type and condition of anodization), which is a sensitive thermal sensor. In case the analyte undergoes on morphological or chemical changes due to the altered temperature, this sensor can monitor the alteration (Letant and Sailor, 2000;Nassiopoulou, 2005). On the other hand, the porous silicon (often doped with Pd) is applicable for chemical sensing at room or higher temperature.…”

Section: Applications Of Functional Thin Films and Nanostructure Basementioning

confidence: 99%

Functional Thin Films and Nanostructures for Sensors

Zribi¹,

Fortin²

2009

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This chapter covers the description of different sensor types, transducers, transducing principles, preparations and characterization methods of nanostructured materials, as well as applications of functional thin films and nanostructured materials in sensing. Introduction to sensorsThe fast developments in the field of materials science, particularly nanoscience, have been significant drivers in the progress of sensor technologies. For instance, the high resonance stability of single-crystal quartz, as well as its piezoelectric properties, has made possible an extraordinarily wide range of high performance, affordable sensors that have played an important role in everyday life and national defense. More recently, a new era in sensor technology was the applications of new nanoscale structured materials, creating new approaches for transducing physical phenomena into electrical output that can be readily processed by a computer.Ongoing developments in the immobilization of nanostructured materials on transducers will permit improved sensing properties and behavior, thereby offering possibilities for new sensors with innovative features, such as greater fidelity, economical advantage and improved reliability.Modern sensors produce a voltage out-put or a digital signal that indicates the changes of the measured physical variable. Those output signals are often imported into computer programs, stored in files, plotted on computers and analyzed for end-users.In spite of the widespread published literature on the detailed sensor technology; significant ambiguity exists in sensor definition and classification, one based on properties sensed and the other on technologies used. Sensor ClassificationSensors are classified in many schemes that range from simple formula to complex. A practical possible classification method of sensors considers all sensor properties, such as stimulus, specifications, physical phenomenon, conversion mechanism, material, and application field.Chapter: 16. Functional thin films and nanostructures for sensors [AUTHOR NAME] Shaban A, Telegdi J, Felhősi I, Other classification methods for sensors include physical or chemical effect/transduction principle; measured primary input variable, material of the sensor element, applications cost; accuracy, and output signal domain. Types of SensorsOne of the ways of classifying sensors is based on the output signals. Most applied sensor types that can be associated with their capability are listed as: Magnetic parameters: Magnetic moment, magnetic flux density, etc.

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“…Different doping of silicon will yield different orientation to the surface and reaction to the etching parameters. For example n-type silicon will produce higher porosity porous silicon while a p-type would react inversely when both electrochemically etched with same method [5]. The pore structure will never overlap its neighboring pore and also has the constant hole etching rate which will never overlying the upper etched layer.…”

Section: Introductionmentioning

confidence: 99%

Physical effects from etching parameters of the Bragg Grating Waveguide fabricated on porous silicon nanostructure

Radzi

Yusop

Ikhsan

et al. 2012

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)

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Multilayer structure of Bragg Grating Waveguide (BGW), porous silicon (PSi)-based was fabricated and characterized. The BGW was directly etched on a PSi-based planar waveguide. Adjustment of parameters for the electrochemical process will let the realization of multilayer properties of PSi. Fabricated BGW structure depends on thickness and layers of porous structure, and also average pore size. It is well known from previous study that the modulation of multilayer PSi much affected by the HF concentration of electrolyte, etching time, and current density applied during the electrochemical etching process. Surface homogeneity and layer uniformity are also the scope of study and both are much relying on those factors. The average refractive index, n and pore sizes for the multilayer structure were determined and the comparison of the results based from the study was shown. Fabricated BGW on PSi is now intensely investigated for application as an optical sensor for chemical substances.

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Porous Silicon for Sensor Applications

Cited by 4 publications

References 35 publications

Study the impact of radiation on the electrical properties of SnO2/Si reagents

Study the impact of radiation on the electrical properties of SnO2/Si reagents

Functional Thin Films and Nanostructures for Sensors

Physical effects from etching parameters of the Bragg Grating Waveguide fabricated on porous silicon nanostructure

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