Porous Silicon Formation by Galvanic Etching

Kołasiński, Kurt W.

doi:10.1007/978-3-319-71381-6_3

Cited by 2 publications

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“…Thinning of the space charge region at high doping level enhances tunneling through the barrier. 34 Therefore, porous and photoluminescent Si NWs can be formed with highly doped Si in analogy to galvanic 35 or electrochemical 36 etching. The dissolution by H2O2 of deposited Ag followed by its re-deposition may also play a role in remote etching.…”

Section: Table Of Contents Graphicmentioning

confidence: 99%

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Tamarov

Swanson

Unger

et al. 2019

ACS Appl. Mater. Interfaces

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Section: Table Of Contents Graphicmentioning

confidence: 99%

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Tamarov

Swanson

Unger

et al. 2019

ACS Appl. Mater. Interfaces

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“…These studies were performed in conjunction with the need to suppress metal impurities on the surfaces of Si wafers in order to obtain reliable performance in ultra-large-scale integration (ULSI) devices. Li and Bohn [ 14 ] demonstrated that thin Au, Pt, or Au/Pd layers could be used to localize the formation of photoluminescent porous silicon (por-Si) in a manner closely related to the galvanic etching [ 15 ] process discovered by Kelly et al [ 16 , 17 ]. However, it was the discovery by KQ Peng et al [ 13 , 18 ] that such anisotropic electron transfer could be used to initiate preferential directional etching of silicon that transformed metal-assisted catalytic etching (MACE, also known as metal-assisted etching (MAE), metal-assisted chemical etching, and MacEtching) into a technique for controlled micro- and nano-structuring beyond porosification.…”

Section: Introductionmentioning

confidence: 99%

Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

Kołasiński

2021

Micromachines

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Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders.

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Porous Silicon Formation by Galvanic Etching

Cited by 2 publications

References 81 publications

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

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