Handbook of Porous Silicon 2017
DOI: 10.1007/978-3-319-04508-5_3-2
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Porous Silicon Formation by Galvanic Etching

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Cited by 2 publications
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“…The galvanic technique relies on using the current generated by the electrochemical potential difference between the exposed Si and the platinum deposited on the backside of the wafer. ,, The galvanic technique is useful because Si chips of arbitrary dimensions can be etched and the etch rate is quite high, which helps minimize the time the wafer is exposed to HF that can cause damage to the metals of the ignitor wire. The chips are etched for 10 min and produce an nPS film that is ∼65 μm thick as measured by SEM cross section and a porosity measured by the gravimetric method of 79–83%.…”
Section: Methodsmentioning
confidence: 99%
“…The galvanic technique relies on using the current generated by the electrochemical potential difference between the exposed Si and the platinum deposited on the backside of the wafer. ,, The galvanic technique is useful because Si chips of arbitrary dimensions can be etched and the etch rate is quite high, which helps minimize the time the wafer is exposed to HF that can cause damage to the metals of the ignitor wire. The chips are etched for 10 min and produce an nPS film that is ∼65 μm thick as measured by SEM cross section and a porosity measured by the gravimetric method of 79–83%.…”
Section: Methodsmentioning
confidence: 99%
“…Thinning of the space charge region at a high doping level enhances tunneling through the barrier. 34 Therefore, porous and photoluminescent Si NWs can be formed with highly doped Si in analogy to galvanic 35 or electrochemical 36 etching. The dissolution by H 2 O 2 of deposited Ag followed by its redeposition may also play a role in remote etching.…”
mentioning
confidence: 99%