2001
DOI: 10.1016/s0925-3467(01)00031-3
|View full text |Cite
|
Sign up to set email alerts
|

Porous silicon light-emitting diodes – mechanisms in the operation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2007
2007
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(5 citation statements)
references
References 4 publications
0
5
0
Order By: Relevance
“…For t = 5 min, the breakdown voltage is higher than 25 V, it decreases to 5 V when etching time increases to 20 min. Generally, the breakdown voltage is related to the state of the PS/Si interface [18]. Therefore, we suggest that the increase of the breakdown voltage with etching time is attributed to the reduction of the morphological features curvature localised at the PS/Si interface.…”
Section: Current-voltage Characteristicsmentioning
confidence: 76%
“…For t = 5 min, the breakdown voltage is higher than 25 V, it decreases to 5 V when etching time increases to 20 min. Generally, the breakdown voltage is related to the state of the PS/Si interface [18]. Therefore, we suggest that the increase of the breakdown voltage with etching time is attributed to the reduction of the morphological features curvature localised at the PS/Si interface.…”
Section: Current-voltage Characteristicsmentioning
confidence: 76%
“…13 Porous materials allow the scattering of photons, thus lowering the TIR and increasing the transmission of light, creating a greater light extraction capacity with respect to traditional LEDs. 13,36 In addition, solid-state luminescence has shown great challenges in practical applications due to relatively low photoluminescence quantum yield (PLQY) values as a result of quenched fluorescence, aggregation, and phase separation. 37 The assembly and dispersion of molecules in rigid frameworks can tackle the issue by eliminating their aggregation, thus enhancing the luminescence of solid-state materials.…”
Section: Introductionmentioning
confidence: 99%
“…In traditional GaN LED chips, the large difference in the refractive indexes between GaN and air encloses most of the emitted light in the reflecting cavity by total internal reflection (TIR), and at least 18% of the produced light is reflected by the cavity back into the chip rather than being scattered around . Porous materials allow the scattering of photons, thus lowering the TIR and increasing the transmission of light, creating a greater light extraction capacity with respect to traditional LEDs. , In addition, solid-state luminescence has shown great challenges in practical applications due to relatively low photoluminescence quantum yield (PLQY) values as a result of quenched fluorescence, aggregation, and phase separation . The assembly and dispersion of molecules in rigid frameworks can tackle the issue by eliminating their aggregation, thus enhancing the luminescence of solid-state materials.…”
Section: Introductionmentioning
confidence: 99%
“…While the quantum-confinement model remains a cornerstone, ongoing research has expanded our knowledge by investigating the influence of various factors such as surface passivation, surface recombination velocities and fabrication techniques on the tuning of the PL properties. These findings paved the way for diverse applications utilizing PSi as a substrate, spanning technologies such as light-emitting diodes [ 4 , 5 ], photodetectors [ 6 , 7 , 8 , 9 , 10 , 11 ], solar cells [ 12 , 13 , 14 , 15 , 16 ] and biomedical applications [ 17 , 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%