Porous Silicon Microcavities as Optical and Electrical Chemical Sensors

Mulloni, Viviana; Gaburro, Z.; Pavesi, L.

doi:10.1002/1521-396x(200011)182:1<479::aid-pssa479>3.0.co;2-x

Cited by 21 publications

(5 citation statements)

References 11 publications

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“…A variety of PS vapor sensors have been reported in which the signal transduction mechanism is based on a change in refractive index of the PS layer. Depending on the device structure and the experimental setup, this causes either a shift in the peak wavelength of a PS microcavity, a PS Bragg mirror, or changes in ellipsometric parameters of PS layers. , In these studies, different degrees of liquid filling have been calculated by fitting the experimental results to theoretical models. The present work (in particular the results of Figure ) supports the capillary condensation mechanism as the source of enhanced sensitivity in these microporous materials at higher analyte concentrations (above about 10 ppm).…”

Section: Resultsmentioning

confidence: 99%

“…Depending on 2. the device structure and the experimental setup, this causes either a shift in the peak wavelength of a PS microcavity, 40 a PS Bragg mirror, 12 or changes in ellipsometric parameters of PS layers. 10,22 In these studies, different degrees of liquid filling have been calculated by fitting the experimental results to theoretical models.…”

Section: Mλ ) 2nlmentioning

confidence: 99%

“…More elaborate optical structures such as Bragg mirrors, Fabry-Pérot microcavities − and waveguides , have also been constructed from PS. The application of these architectures to vapor sensing has been exploited by measuring shifts of the Bragg wavelength, peak PL wavelength, or transmitted power, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…More elaborate optical structures such as Bragg mirrors, 34 Fabry-Pe ´rot microcavities [35][36][37] and waveguides 38,39 have also been constructed from PS. The application of these architectures to vapor sensing has been exploited by measuring shifts of the Bragg wave- length, 12 peak PL wavelength, 40 or transmitted power, 41 respectively. While vapor sensing can be achieved based on measurements of the shift of Fabry-Pe ´rot fringes or the change in optical thickness using a spectrometer, we recently reported a simpler and more sensitive technique using a monochromatic diode laser and a photodiode.…”

Section: Introductionmentioning

confidence: 99%

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Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Gao

et al. 2002

Langmuir

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Vapor sensors using thin porous silicon (PS) Fabry-Pe ´rot films were prepared and characterized. The detection method used in this work involves measurement of the intensity of reflected light from a microporous Si film as a function of analyte concentration. Analyte adsorption within the pores of the film causes the Fabry-Pe ´rot fringes to shift to higher wavelengths as a result of an increase in the average refractive index of the PS layer. Two transduction methodologies are employed: measurement of the intensity of reflected light using a low-power red diode laser source, and measurement of the spectrum of reflected light in the wavelength range 400-1000 nm, using a white light (tungsten) source. The effect of PS film thickness and porosity on sensitivity are systematically studied. A detection limit of 250 ppb for the analyte ethanol in a nitrogen gas carrier stream has been demonstrated. Experimental results suggest that capillary condensation is in part responsible for the high sensitivity of these vapor sensors.

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Section: Resultsmentioning

confidence: 99%

Section: Mλ ) 2nlmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Gao

et al. 2002

Langmuir

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“…3,4 Alternating layers of dielectric materials with two different dielectric constants are the simplest possible photonic crystals 5 with many applications. [6][7][8][9][10][11][12] Due to the versatile nature of porous silicon, 13 it has been established as a promising material for photonic applications. 14 1D porous silicon photonic bandgap structures have already found many applications such as dielectric mirrors, 15 waveguides, 16 sensors 17 and many other devices.…”

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confidence: 99%

Enlargement of omnidirectional photonic bandgap in porous silicon dielectric mirrors with a Gaussian profile refractive index

et al. 2009

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For enhancing the omnidirectional photonic bandgap ͑OPBG͒, we report the fabrication of two different configurations of one-dimensional, wavelength scalable dielectric multilayer structures of porous silicon, consisting of a unit cell formed by varying the refractive index of the multilayers according to the envelope of a Gaussian function. As compared to the already reported OPBG of 88 nm ͑in the complete angular range of 0°to 89°͒, an enhancement up to 204 nm ͑2.3 times͒ was observed on stacking, six different Gaussian structures ͑balanced mirror͒ with only 8 periods each. An unbalanced mirror structure, consisting of the six similar Gaussian structures as the balanced mirror, but having different sequence of periods, ͑configuration with 13, 6, 5, 5, 6, and 13 periods for each Gaussian, respectively͒ was seen to demonstrate the OPBG of 252 nm ͑enhanced by 2.86 times͒. The total optical thickness of both the structures was kept to be the same. The omnidirectional nature of the PBG was verified experimentally up to 68°and theoretically up to 89.9°angle of incidence.In the recent years, one-dimensional ͑1D͒ photonic bandgap structures such as dielectric multilayers with an omnidirectional bandgap in a specific wavelength region 1,2 have been studied extensively. Such structures have an advantage over simple metallic mirrors of being nondispersive and nonabsorbing in the visible and near infrared ͑NIR͒ range. 3,4 Alternating layers of dielectric materials with two different dielectric constants are the simplest possible photonic crystals 5 with many applications. [6][7][8][9][10][11][12] Due to the versatile nature of porous silicon, 13 it has been established as a promising material for photonic applications. 14 1D porous silicon photonic bandgap structures have already found many applications such as dielectric mirrors, 15 waveguides, 16 sensors 17 and many other devices. 18 Bruyant et al. reported omnidirectional mirrors, based on 1D photonic crystals from porous silicon, 19 in two kinds of structures: simple periodic and chirped periodic structure such that the thickness of the last bilayer was 3.5% longer than the first bilayer. Apart from that in 2005, presented a theoretical study to enlarge the omnidirectional bandgap ͑OPBG͒ of two multilayered structures ͑named balanced and unbalanced mirrors͒ by varying only the thicknesses of the periods along the depth of the structure. Using the transfer matrix method, Arriaga and Saldaña 21 theoretically demonstrated the presence of OPBGs in the silicon based mirrors, with a periodic repetition of a unit cell composed of multilayers with a Gaussian profile refractive index. Recently our group 22 designed and fabricated 1D photonic bandgap ͑PBG͒ structures from dielectric multilayers of porous silicon, with a periodic repetition of a unit cell consisting of 22 layers, where the refractive index of the 95% of the unit cell varied according to the envelope of a Gaussian function. Three different Gaussian structures ͑with 15 unit cells each͒ were stacked together to en...

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Porous Silicon Gas Sensing

Barillaro¹

2014

Handbook of Porous Silicon

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Porous Silicon Microcavities as Optical and Electrical Chemical Sensors

Cited by 21 publications

References 11 publications

Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Enlargement of omnidirectional photonic bandgap in porous silicon dielectric mirrors with a Gaussian profile refractive index

Porous Silicon Gas Sensing

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