Porous silicon oxide sacrificial layers deposited by pulsed-direct current magnetron sputtering for microelectromechanical systems

Olivares, J.; Clément, M.; González-Castilla, S.; Vergara, L.; Iborra, E.; Sangrador, J.

doi:10.1016/j.tsf.2010.03.013

Cited by 10 publications

(2 citation statements)

References 33 publications

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“…High-purity Si, Ta and Ti targets 150 mm-in-diameter were sputtered using Ar/0 2 mixtures of different composition. The deposition process of both Si0 2 and TaO x films had been extensively studied previously; details of the film characteristics as a function of the sputter parameters can be found in earlier works [8,9]. The sputtering process of the Ti0 2 films was carried out by applying to the Ti target a pulsed-DC power of 50 kHz and duty cycle of 75% ranging from 200 W to 800 W. The total pressure in the chamber was varied between 1.5 mTorr and 3.3 mTorr and the percentage of 0 2 in the gas between 30% and 100%.…”

Section: A Sputtering Processmentioning

confidence: 99%

“…We have investigated the growth of AIN on silicon nitride (Si 3 N 4 ), tantalum oxide (Ta 2 0 5 ), sputtered Si0 2 and Ti0 2 . The sputtering process of Si 3 N 4 , Ta 2 0 5 and Si0 2 had been already studied in previous works by the authors [8][9]. Since the best preliminary results were achieved when using Ti0 2 seed layers, the present work is mainly focused on the study of the Ti0 2 deposition process in order to set the optimum conditions for the growth of high quality AIN films.…”

Section: Introductionmentioning

confidence: 99%

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Growth of AlN oriented films on insulating substrates

Olivares

Capilla

Clément

et al. 2011

2011 IEEE International Ultrasonics Symposium

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Abstract-This work describes the structural and piezoelectric assessment of aluminum nitride (AIN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investígate the effect of different insulating seed layers on AIN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (SÍ3N4), silicon dioxide (Si0 2 ), amorphous tantalum oxide (Ta 2 O s ), and amorphous or nano-crystalline titanium oxide (Ti0 2 ) are deposited on glass plates to a thickness lower than 100 nm. Before AIN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argón or nitrogen ions. Only AIN films grown of Ti0 2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Puré c-axis oriented films, with FWHM of rocking curve of 6 o , stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AIN films are achieved on amorphous Ti0 2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AIN films deposited on Si 3 N 4 , Si0 2 and TaO x exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalídate their use in acoustic devices.

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Section: A Sputtering Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%