Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3

Li, Yuewen; Xiu, Xiangqian; Jia, Zhitai; Liu, Duo; Hua, Xue‐Mei; Xie, Zili; Tao, Tao; Chen, Peng; Liu, Bin; Tao, Xutang; Zhang, Rong; Zheng, Youdou

doi:10.1016/j.spmi.2018.12.024

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Analysis Of Nitridation Temperature1

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2019

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Cited by 3 publications

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“…And the Ga-N 6 bond configuration is unstable and will spontaneously convert to more stable Ga-N 4 bond configuration. [23] So the strain may be caused by the incomplete conversion with the short nitridation time, and enough nitridation time would promote the complete transformation which is verified by the effect of the nitridation time below. And the intensity of the Raman peak corresponding to GaN gradually increases with the increase of nitridation temperature.…”

Section: Analysis Of Nitridation Temperaturementioning

confidence: 90%

Study on the nitridation of β-Ga₂O₃ films*

Cheng¹,

Li²,

Zhao³

et al. 2019

Chinese Phys. B

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Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

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Section: Analysis Of Nitridation Temperaturementioning

confidence: 90%