Positioning of Strained Islands by Interaction with Surface Nanogrooves

Katsaros, Georgios; Tersoff, J.; Stoffel, M.; Rastelli, Armando; Acosta-Diaz, P.; Kar, Gouri Sankar; Costantini, Giovanni; Schmidt, Oliver G.; Kern, Klaus

doi:10.1103/physrevlett.101.096103

Cited by 35 publications

(29 citation statements)

References 27 publications

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“…[7][8][9][10][11] When substrate surface is patterned, there is an additional effect on wetting properties of solid adsorbates such that the location and size of adsorption can be controlled. [12][13][14][15][16] On a substrate with nanopillars, one expects "supersolidphobicity," similar to the liquid droplets, but instead of the flow properties, improvement of the solid quality is expected.…”

Section: Introductionmentioning

confidence: 99%

Collapse of an adsorbate island on substrate pillars

2010

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We study an equilibrium shape of an adsorbate solid island on a substrate surface patterned with arrays of pillars. For a large island with a weak wettability to the substrate, an island sits on top surfaces of pillars, in a state called Cassie-Baxter ͑CB͒ state. In the opposite case of a small island with a strong wettability, the island collapses in the space between pillars, forming the so-called Wenzel ͑W͒ state. The collapse transition from CB to W state is studied in the phase space of the island volume and the wettability. Theory leads to collapse transition lines for an island with only ͑100͒ facets at zero temperature. They are in good agreement with the transitions observed in kinetic Monte Carlo simulations of an island with additional ͑110͒ and ͑111͒ facets at a finite temperature.

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Section: Introductionmentioning

confidence: 99%

Collapse of an adsorbate island on substrate pillars

2010

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“…The surface chemical potential is given by µ = µ 0 + Ωεκ + ΩE s , where µ 0 is the chemical potential for the flat surface, Ω is the atomic volume, ε is the surface energy per unit area, κ is the surface curvature and E s is the local strain-relaxation energy. 15 As we know, Ge QDs preferentially nucleate on the sites where local surface chemical potential has a minimum, 18,19 so the nucleation and growth of Ge QDs on Si substrate can well be controlled by the surface chemical potential minimum sites. 20 In our case, Ge QDs preferentially nucleate and grow at the top surface edge of the pillar.…”

Section: -4mentioning

confidence: 99%

Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars

Jiang

et al. 2016

AIP Advances

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We report on a simple and intuitionistic experimental method to quantitatively measure surface diffusion lengths of Ge adatoms on Si(001) substrates and its activation energy Ea, which is achieved by growing Ge quantum dots (QDs) on top surfaces of Si pillars with different radii and taking an advantage of preferential nucleation and growth of Ge QDs at the top surface edge of the pillars. Diffusion length of Ge adatom can directly be measured and determined by the radius of the pillar below which no QDs will nucleate and grow at the central region of the top surface of the Si pillar. With a growth rate v fixed at 0.1 Å/s, by changing the growth temperature, the diffusion lengths at different temperatures would be obtained. Arrhenius plot of diffusion length as a function of growth temperature gives the value of Ea of 1.37 eV. Likewise, with a growth rate v fixed at 0.05 Å/s, the Ea value is obtained to be 1.38 eV. Two Ea values agree well with each other, implying that the method is reliable and self-consistent. Moreover, for a fixed growth temperature, the surface diffusion lengths are found to be directly proportional to 1/ν. It also agrees well with the theoretical prediction, further demonstrating the reliability of the method.

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“…12,13 Besides the lattice mismatch, the origin of strain can also be external applied strain which has been achieved via surface engineering, including generating a surface strain field from buried dislocation networks, strained islands, or patterned topographic surface features. [14][15][16][17][18][19] Strain in nanomaterials is expected to be significantly enhanced relative to bulk materials, thus opening a fruitful direction for research. It is critical to characterize elastic deformation within nanoscale structures.…”

Section: Introductionmentioning

confidence: 99%

Understanding the effects of strain on morphological instabilities of a nanoscale island during heteroepitaxial growth

Liu

Wang

et al. 2015

Journal of Applied Physics

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A comprehensive morphological stability analysis of a nanoscale circular island during heteroepitaxial growth is presented based on continuum elasticity theory. The interplay between kinetic and thermodynamic mechanisms is revealed by including strain-related kinetic processes. In the kinetic regime, the Burton-Cabrera-Frank model is adopted to describe the growth front of the island. Together with kinetic boundary conditions, various kinetic processes including deposition flow, adatom diffusion, attachment-detachment kinetics, and the Ehrlich-Schwoebel barrier can be taken into account at the same time. In the thermodynamic regime, line tension, surface energy, and elastic energy are considered. As the strain relief in the early stages of heteroepitaxy is more complicated than commonly suggested by simple consideration of lattice mismatch, we also investigate the effects of external applied strain and elastic response due to perturbations on the island shape evolution. The analytical expressions for elastic fields induced by mismatch strain, external applied strain, and relaxation strain are presented. A systematic approach is developed to solve the system via a perturbation analysis which yields the conditions of film morphological instabilities. Consistent with previous experimental and theoretical work, parametric studies show the kinetic evolution of elastic relaxation, island morphology, and film composition under various conditions. Our present work offers an effective theoretical approach to get a comprehensive understanding of the interplay between different growth mechanisms and how to tailor the growth mode by controlling the nature of the crucial factors. V C 2015 AIP Publishing LLC.

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Positioning of Strained Islands by Interaction with Surface Nanogrooves

Cited by 35 publications

References 27 publications

Collapse of an adsorbate island on substrate pillars

Collapse of an adsorbate island on substrate pillars

Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars

Understanding the effects of strain on morphological instabilities of a nanoscale island during heteroepitaxial growth

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