Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress

Strzałkowski, I.; Kowalski, Marcin

doi:10.1007/bf01567647

Cited by 5 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…s = 1.044 × 10 −12 F cm −1 and C ox = ox /t ox , where ox = 3.45 × 10 −13 F cm −1 is the silicon dioxide permittivity, so that C ox = 3.45 × 10 −8 F cm −2 . For the midgap current (I MG ), the surface potential s ≡ B = qkT ln(N A /n i ) should be taken in equation (1). However, the concentration of acceptor channel doping (N A ) is not known, and the influence of N A on N ft and N st will be analyzed.…”

Section: Methodsmentioning

confidence: 99%

“…The knowledge of the behaviors of electrical parameters, such as threshold voltage and mobility, of MOS transistors during the electrical stresses is very important for their applications, but the knowledge of state behaviors created in the gate oxide (SiO 2 ), near and at the oxide/substrate (SiO 2 /Si) interface, is much more important for technological purposes [1][2][3][4]. One of the electrical stress types is high electric field stress (HEFS), in which a high bias is applied on the transistor gate, known as the Fowler-Nordheim stress.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C

Ristić¹,

Vasovic²

2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The states in the gate oxide (fixed oxide traps), near the gate oxide/substrate interface (slow switching traps/border traps), and states at this interface (fast switching traps/true interface traps), formed by high electric field stress (HEFS) in commercial n-channel power MOSFETs, have been investigated. The midgap technique (MGT) and charge-pumping technique have been applied for that purpose. However, the subthreshold characteristics have been destroyed during the positive HEFS, and MGT could not be applied, but they have not been destroyed during the negative HEFS. The transistor trap densities have shown the high reproducibility within ±5%. Some transistors showed high resistivity to the HEFS with negative gate currents, even up to −0.1 A, and the gate voltages during those experiments reached ≈ −70 V. Spontaneous annealing of N ft and N st (MG) after negative HEFS was very high (about 50%), reaching saturation after ≈ 100 h. The transistors have shown rapid and intensive annealing at 150 • C after negative HEFS, and more than 80% defects have been annealed in less than 1 h.

show abstract

Section: Methodsmentioning

confidence: 99%