Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics

Szelong, M.; Ludwig, Arne; Wieck, A. D.; Kunze, U.

doi:10.1088/1361-6641/aa7d44

Cited by 4 publications

(2 citation statements)

References 41 publications

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“…Our experimental observations are corroborated by finite-element calculations that shed light on the channel geometries required for a strong Poiseuille flow. Our findings offer promising prospects for functional hydrodynamic graphene devices in the near future, such as geometric rectifiers like Tesla valves and charge amplifiers based on the electronic Venturi effects [39][40][41].…”

Section: Discussionmentioning

confidence: 89%

Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs

Huang¹,

Paul²,

Watanabe³

et al. 2022

Preprint

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Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene FETs. In two complementary measurement schemes, we monitor differential resistance of graphene for different channel widths and for different effective electron temperatures. By combining both approaches, the presence of viscous effects is verified in a temperature range starting from 178 K and extending up to room temperature. Our experimental findings are supported by finite element calculations of the graphene channel, which also provide design guidelines for device geometries that exhibit increased viscous effects. The presence of viscous effects near room temperature opens up avenues for functional hydrodynamic devices such as geometric rectifiers like a Tesla valve and charge amplifiers based on electronic Venturi effect.

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Section: Discussionmentioning

confidence: 89%

Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs

Huang¹,

Paul²,

Watanabe³

et al. 2022

Preprint

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“…Moreover, the detection performance depends on the nonlinearity of the I-V curve of the SSDs, which critically depends on the presence of surface charges at the sidewalls of the channels, so that many unknown trap mechanisms, especially in the GaN technology, arise. 9 In order to control the conductance of planar nanochannels, different solutions based on the field effect have been proposed: (i) in-plane gates, where the confining electric field is parallel to the two-dimensional electron gas (2DEG), [10][11][12][13] which provide the transistor effect and voltage-tunability of their I-V curves or (ii) top Schottky contact (SC) gates, 14 used not only in FETs but also in countless semiconductor devices including ballistic devices 15 and Gunn diodes. 16 In this work, we explore the benefits on the main figures of merit of RF detectors, i.e., responsivity (b) and noise equivalent power (NEP), of adding a SC gate on the top of SSDs fabricated on GaN, as sketched in Fig.…”

mentioning

confidence: 99%

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Sánchez-Martín

Matéos

Novoa

et al. 2018

Applied Physics Letters

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This letter reports on room temperature sub-THz detection using self-switching diodes based on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements at 300 GHz, we demonstrate that the responsivity and noise equivalent power (NEP) of sub-THz detectors based on planar asymmetric nanochannels can be improved and voltage controlled by means of a top gate electrode. A simple quasi-static model based on the DC measurements of the current-voltage curves is able to predict the role of the gate bias in its performance. The best values of voltage responsivity and NEP are achieved when the gate bias approaches the threshold voltage, around 600 V/W and 50 pW/Hz1/2, respectively. A good agreement is found between modeled results and those obtained from RF measurements under probes at low frequency (900 MHz) and in free-space at 300 GHz.

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Ballistic rectification based on inhomogeneous magnetic stray fields

Szelong

Ludwig

Wieck

et al. 2019

Journal of Applied Physics

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We present a ballistic rectification effect in an orthogonal four-terminal cross junction where the symmetry is broken by local magnetic fields. The input current is injected between opposing branches and the current-free branches serve as potential probes. The local magnetic field is induced by two permalloy (Py) stripes with a magnetic single-domain structure, where one end of each stripe is positioned close to the junction center. The Py stripes are oriented such that an external in-plane magnetic field can magnetize them into two different main configurations having either equally or oppositely magnetized ends. Equal magnetic ends are expected to result in a Hall-effect device, while for opposite magnetic ends, the stray field should deflect the electrons into the same output lead for both current polarities, leading to a rectifying behavior. Here, we present the proof of concept for stray-field controlled transfer characteristics. First, we show by magnetic force microscopy that both configurations are stable and the Py stripes exhibit a remanent magnetic single-domain structure. Second, we demonstrate the influence of the remanent magnetization on the low-temperature dc characteristics which are superimposed by a parasitic background. Third, we present the extracted Hall and the rectified voltage which are, respectively, linearly and parabolically dependent on the input current up to ±55 μA.

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Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics

Cited by 4 publications

References 41 publications

Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs

Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Ballistic rectification based on inhomogeneous magnetic stray fields

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