We report measurements of current noise auto-and cross-correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the autocorrelation evolves from super-Poissonian to sub-Poissonian in the two-lead case, and the crosscorrelation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross-correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.Considered individually, Coulomb repulsion and Fermi statistics both tend to smooth electron flow, thereby reducing shot noise below the uncorrelated Poissonian limit [1,2]. For similar reasons, Fermi statistics without interactions also induces a negative noise crosscorrelation in multiterminal devices [1,2,3,4]. It is therefore surprising that under certain conditions, the interplay between Fermi statistics and Coulomb interaction can lead to electron bunching, i.e., super-Poissonian auto-correlation and positive cross-correlation of electronic noise.The specific conditions under which such positive noise correlations can arise has been the subject of numerous theoretical [5,6,7,8,9,10,11,12,13,14] and experimental [14,15,16,17,18,19,20,21,22,23] [10,15,24] occurring naturally in these devices. In more controlled geometries, super-Poissonian noise has been associated with inelastic cotunneling [9] in a nanotube quantum dot [20], and with dynamical channel blockade [11,12] in GaAs/AlGaAs quantum dots in the weak-tunneling [21] and quantum Hall regimes [22]. Positive noise cross-correlation has been observed in a capacitively-coupled double dot [23] as well as in electronic beam-splitters following either an inelastic voltage probe [5,6,7,8,19] or a super-Poissonian noise source [18]. The predicted positive noise cross-correlation in a three-lead quantum dot [12] has not been reported experimentally to our knowledge.This Letter describes measurement of current noise auto-and cross-correlation in a Coulomb-blockaded quantum dot configured to have either two or three leads. As a function of gate voltage and bias, regions of superand sub-Poissonian noise, as well as positive and negative noise cross-correlation, are identified. Results are in good agreement with a multi-level sequential-tunneling model in which electron bunching arises from dynamical chan-