Positive Seebeck coefficient of niobium-doped MoS₂ film deposited by sputtering and activated by sulfur vapor annealing

Abstract

Herein we report on the positive Seebeck coefficient S = 162 µV/K of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of measurement and annealing temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.