The free-volume nanostructural transformation in fully crystallized (80GeS 2 -20Ga 2 S 3 ) 100-x (CsCl) x , x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy using mixed positron-and positronium-trapping modes. The CsCl content in GeS 2 -Ga 2 S 3 glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS 2 -20Ga 2 S 3 ) 85 (CsCl) 15 glass resulted in void fragmentation due to loosening of the structure. "Pure" positron-positronium modes calculated by a decomposition formalism show that a realistic process is connected with the expansion of voids formed as a consequence of CsCl addition and complete crystallization into the inner structure of glasses. The CsCl additive formed new positron-trapping sites in the GeGa-S glassy matrix. The bulk positron lifetime in glasses corresponded to positron trapping occurring in nanocrystalline particles. Interface voids were not particularly large because the characteristic value of 0.27-0.30 ns can be connected with typical free volumes of mono-and di-vacancies.