Possibilities and Limitations of CMOS Technology for the Production of Various Microelectronic Systems and Devices

Беспалов, В. А.; Dyuzhev, N. A.; Kireev, V. Yu.

doi:10.1134/s2635167622010037

Cited by 13 publications

(8 citation statements)

References 5 publications

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“…[ 62 ] 2D planar patterns generated by photolithographic masks, whether directly written or copied from a master, continue to be the mainstream of high‐density electronics. To maintain Moore's law, multiple layers of transistors in the same silicon crystalline structure or more recently vertical stacks of thinned chips with high‐density vertical interconnect or interposers [ 63 ] have been produced as layered 3D structured devices. Contrast this with the ability of planar structures to fold into non‐space‐filling 3D architectures.…”

Section: Folding Of Smart Thin‐film Microelectronic Modules—shape Div...mentioning

confidence: 99%

Microelectronic Morphogenesis: Smart Materials with Electronics Assembling into Artificial Organisms

McCaskill,

Karnaushenko,

Zhu

et al. 2023

Advanced Materials

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Microelectronic morphogenesis is the creation and maintenance of complex functional structures by microelectronic information within shape‐changing materials. Only recently has in‐built information technology begun to be used to reshape materials and their functions in three dimensions to form smart microdevices and microrobots. Electronic information that controls morphology is inheritable like its biological counterpart, genetic information, and is set to open new vistas of technology leading to artificial organisms when coupled with modular design and self‐assembly that can make reversible microscopic electrical connections. Three core capabilities of cells in organisms, self‐maintenance (homeostatic metabolism utilizing free energy), self‐containment (distinguishing self from nonself), and self‐reproduction (cell division with inherited properties), once well out of reach for technology, are now within the grasp of information‐directed materials. Construction‐aware electronics can be used to proof‐read and initiate game‐changing error correction in microelectronic self‐assembly. Furthermore, noncontact communication and electronically supported learning enable one to implement guided self‐assembly and enhance functionality. Here, the fundamental breakthroughs that have opened the pathway to this prospective path are reviewed, the extent and way in which the core properties of life can be addressed are analyzed, and the potential and indeed necessity of such technology for sustainable high technology in society is discussed.

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Section: Folding Of Smart Thin‐film Microelectronic Modules—shape Div...mentioning

confidence: 99%

Microelectronic Morphogenesis: Smart Materials with Electronics Assembling into Artificial Organisms

McCaskill,

Karnaushenko,

Zhu

et al. 2023

Advanced Materials

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“…[7][8][9] However, as the CMOS-based devices continue to show a decrease in dimensions and reach their physical limits, the continuation of Moore's law faces tough challenges. 10,11 Hence, innovative and efficient memory devices are being continuously explored to meet this rising demand. 10 AI, neural networks, and machine learning have played a vital role in the recent development of memory and data storage devices.…”

Section: Introductionmentioning

confidence: 99%

Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

Singh,

Gupta

2024

Mater. Adv.

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“…With the phenomenal development of intelligent systems, the demand for innovative and efficient technological supports is rapidly increasing, but CMOS technology is quickly approaching its limits [1,2]. Among the alternative technologies that emerged to address "Beyond CMOS"-era challenges, special attention has been focused on RFETs [3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Efficient Addition Circuits Using Three-Gate Reconfigurable Field Effect Transistors

Spagnolo,

Corsonello,

Frustaci

et al. 2024

JLPEA

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Reconfigurable FETs (RFETs) are widely recognized as a promising way to overcome conventional CMOS architectures. This paper presents novel addition circuit intentionally designed to exploit the ability of RFETs to operate efficiently on demand as n- or p-type FETs. First, a novel Full Adder (FA) is proposed and characterized. A comparison with other designs shows that the proposed FA achieves a worst-case delay and a dynamic power consumption of up to 43.5% and 79% lower. As a drawback, in terms of the estimated area, it is up to 32% larger than the competitors. Then, the new FA is used to implement Ripple-Carry Adders (RCAs). A 32-bit adder designed as proposed herein reaches an energy–delay product (EDP) ~25.7× and ~141× lower than its CMOS and the RFET-based counterparts.

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Possibilities and Limitations of CMOS Technology for the Production of Various Microelectronic Systems and Devices

Cited by 13 publications

References 5 publications

Microelectronic Morphogenesis: Smart Materials with Electronics Assembling into Artificial Organisms

Microelectronic Morphogenesis: Smart Materials with Electronics Assembling into Artificial Organisms

Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

Efficient Addition Circuits Using Three-Gate Reconfigurable Field Effect Transistors

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