Possibilities and limitations of imaging spectroscopic reflectometry in optical characterization of thin films

Ohlídal, Miloslav; Ohlı́dal, Ivan; Nečas, David; Vodák, Jiří; Franta, Daniel; Nádaský, Pavel; Vižd'a, František

doi:10.1117/12.2191052

Cited by 4 publications

(3 citation statements)

References 39 publications

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“…There are many reasons of originating random roughness of the boundaries of thin films. One of the important reasons of the existence of this defect is residual roughness of substrates on which the systems of thin films are deposited [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Diffuse Reflectance of Thin Films with Defects

VIŽĎA¹

2022

Challenges to National Defence in Contemporary Geopolitical Situation

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This paper presents the method of the optical analysis of thin films with defects. The attention is devoted to the defects consisting in boundary roughness. This method is based on interpreting the spectral dependences of the diffuse reflectance of light [1-5]. Thin films are used in the optical and military industries and in military applications, for example for the creation of anti-reflective layers or laser mirrors [6]. The numerical analysis confirms the fundamental influence of the parameters of the defects of thin films on the diffuse reflectance.

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Section: Introductionmentioning

confidence: 99%

Diffuse Reflectance of Thin Films with Defects

VIŽĎA¹

2022

Challenges to National Defence in Contemporary Geopolitical Situation

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“…There are various methods to measure the thickness or distribution of thin film, such as eddy current method, optical interferential method [4], X-ray method [5], AFM technology [6] and so on. However, there are many limits for these methods, such as the electroconductibility, reflection coefficient, and resolution.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic imaging ellipsometry for thin film detection on uniaxial crystal

Guan

Ding

et al. 2017

SPIE Proceedings

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Spectroscopic imaging ellipsometry (SIE) is a powerful technique devoted to the study of optical properties and thickness of thin films by measuring the change in polarization state of light reflected from the surface. SIE measures two quantities (ψ and Δ ), which represent the amplitude ratio and phase angle of deflection of the p-polarized light and s-polarized light reflected from the sample surface. The SIE measurement of thin film is difficult when the substrate is uniaxial anisotropic crystal for two reasons -firstly the p-polarized and s-polarized components of reflective light are coupled which makes the data processing more complex and secondly an optical model is needed for SIE data processing with the substrate optical constants as known parameters in the model, but the substrate optical constants are not unique when the plane of the optical axis changes. Hence in the measurement of thin film on an anisotropic material using generalized ellipsometry, significant errors due to the complex calculation arise. The best approach is to measure the uniaxial substrate as an isotropic material by adjusting the optical axis in the incident plane. In this paper, the crystal optical axis is determined by rotating the sample using the SIE setup and the incident light is adjusted in the optical axis plane to eliminate the effects of uniaxial substrate. A uniaxial KDP (Potassium Dihydrogen Phosphate) crystal with thin oil film and a bare KDP substrate are prepared. A scheme to determine KDP crystal optical axis is proposed. Finally, the optical constants of the KDP substrate are determined, and the oil film thickness on KDP crystal is measured when the incident light is in crystal optical axis plane.

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“…Various ways of ISR utilization (in combination with conventional ellipsometry and photometry or even as a standalone technique in some cases) and methods of thin film optical parameters evaluation of its experimental data have been developed. Possibilities and limitations of ISR are discussed in [14]. Some recent applications of ISR to thin films with high gradient of non-uniformity have revealed that it is worthwhile to improve its spatial resolution on a sample under study [15].…”

Section: Introductionmentioning

confidence: 99%

Determination of local thickness values of non-uniform thin films by imaging spectroscopic reflectometer with enhanced spatial resolution

Vodák

Nečas

Ohlídal

et al. 2017

Meas. Sci. Technol.

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In this paper an imaging spectroscopic reflectometer with enhanced spatial resolution is presented. Main features of its design, experimental data acquisition, i.e. maps of thin film spectral dependencies of local reflectance and the local thickness map determination are described. The ability of this instrument to characterize thin film thickness non-uniformity with high gradients is demonstrated on measurements of thin film edges. A comparison with an older device is also presented.

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Possibilities and limitations of imaging spectroscopic reflectometry in optical characterization of thin films

Cited by 4 publications

References 39 publications

Diffuse Reflectance of Thin Films with Defects

Diffuse Reflectance of Thin Films with Defects

Spectroscopic imaging ellipsometry for thin film detection on uniaxial crystal

Determination of local thickness values of non-uniform thin films by imaging spectroscopic reflectometer with enhanced spatial resolution

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